Microwave Distributed Feedback (DFB) Laser provides exceptional performance for linear fiber optics communications in very wide bandwidth applications. ML1001 linear fiber optic lasers are an excellent alternative to using coaxial cable systems to transmit 10 MHz to 18 GHz signals. They offer significant improvements in reliability of microwave communications networks by transmitting the RF signal in its original format. LD-PD offers DFB lasers with a 3dB frequency response bandwidth above 10 GHz for applications that rely on high-speed direct modulation.These lasers are offered in standard 7-pin butterfly package with RF (K) connector, internal thermoelectric cooler, isolator, and polarizationmaintaining (PM) fiber pigtail with FC/APC connectors.Other configurations ( no-isolator, single mode fiber, etc) are available upon request.
Product model
| 18GHz 1550nm RF modulation DFB laser |
LP-ML1001C-55-FA | Central wavelength 1550nm; Optical Output Power 8dBm; Bandwidth 18GHz; FC/APC 0.9mm, 1m length | Central wavelength: 1550nm Output power: 6.31mW Bandwidth: 18GHz Package: 7pin - RF |
| 20GHz 1550nm Microwave DFB laser |
LP-ML1001B-55-FA | Central wavelength 1550nm; Optical Output Power 8dBm; Bandwidth 20GHz; FC/APC 0.9mm, 1m length | Central wavelength: 1550nm Output power: 6.31mW Bandwidth: 20GHz Package: 7pin - RF |
| 20GHz 1310nm RF modulation DFB laser |
LP-ML1001D-31-FA | Central wavelength 1310nm; Optical Output Power 8dBm; Bandwidth 20GHz; FC/APC 0.9mm, 1m length | Central wavelength: 1310nm Output power: 6.31mW Bandwidth: 20GHz Package: 7pin - RF |
| 15GHz 1310nm RF modulation DFB laser |
LP-ML1001B-31-FA | Central wavelength 1310nm; Optical Output Power 8dBm; Bandwidth 15GHz; FC/APC 0.9mm, 1m length | Central wavelength: 1310nm Output power: 6.31mW Bandwidth: 15GHz Package: 7pin - RF |
| 10GHz 1310nm RF modulation DFB laser |
LP-ML1001A-31-FA | Central wavelength 1310nm; Optical Output Power 8dBm; Bandwidth 10GHz; FC/APC 0.9mm, 1m length | Central wavelength: 1310nm Output power: 6.31mW Bandwidth: 10GHz Package: 7pin - RF |
| 10GHz 1550nm RF modulation DFB laser |
LP-ML1001A-55-FA | Central wavelength 1550nm; Optical Output Power 8dBm; Bandwidth 10GHz; FC/APC 0.9mm, 1m length | Central wavelength: 1550nm Output power: 6.31mW Bandwidth: 10GHz Package: 7pin - RF |
| 18GHz 1310nm RF modulation DFB laser |
LP-ML1001C-31-FA | Central wavelength 1310nm; Optical Output Power 8dBm; Bandwidth 18GHz; FC/APC 0.9mm, 1m length | Central wavelength: 1310nm Output power: 6.31mW Bandwidth: 18GHz Package: 7pin - RF |
Parameter
Features
● High-Dynamic-Range
● 10 MHz to 18 GHz Bandwidth
● Low threshold current
● High output power
● 7pin butterfly package with SMA connector
● Operating case temperature: -40 to 85 °C
● High reliability
E/O Characteristics
Optical and Electrical Specification (Tc=25°C) |
Parameter | Symbol | Min | Typ | Max | Units | Note |
Optical Output Power | P | 8 | 10 |
| dBm | 1 |
Thershold current | Ith |
| 10 |
| mA | - |
Operation current | Iop |
| 55 | 100 | mA |
|
Operation voltage | Vop |
| 1.5 | 2.5 | V | - |
Peak wavelength | λ | - | 1310 | - | nm | Any in C-band |
Slope efficiency | SE | 0.2 |
|
| W/A |
|
Side-mode suppression ratio | SMSR | 30 |
|
| dB |
|
Rative Intensity Noise | RIN |
| -150 | -130 | dB/Hz |
|
Bandwidth (-3dB,I=60mA) | S21 |
| 18 |
| Ghz | - |
Return loss | S11 |
| -10 | -6 | dB |
|
Input 1 dB Compression |
|
| 18 |
| dBm |
|
Thermistor Resistance | Rth |
| 10 |
| Kohm | @25C,NTC, Beta 3930k |
TEC current | It |
|
| 1.2 | A | 2 |
TEC voltage | Vt |
|
| 2.5 | V | 2 |
Capacitance (PD) | Ct |
|
| 20 | pF |
|
Monitoring current | Im | 0.05 |
| 2.0 | mA |
|
Dark current (PD) | Id |
|
| 50 | nA |
|
Capacitance (PD) | Ct |
|
| 20 | pF |
|
Optical Isolation | ISO |
| 30 |
| dB | No isolator option |
Polarization Extinction ratio | PER | 17 | 20 | 25 | dB |
|
Optical output connector | NA | FC/APC (PM Key aligned to slow axis) |
RF input connector | NA | K102F/2.92 mm (K) Female |
Input Impedance Matching | Ω |
| 50 |
| ohm |
|
Notes: All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in.
1. Laser temperature set 25C, bias current at 55mA;
2. Operation case temperature -5~75C
Performance Specifications
Absolute Maximum Ratings |
Parameter | Symbol | Min. | Max. | Unit |
Laser diode forward current | If |
| 120 | mA |
Laser diode reverse voltage | V |
| 1 | V |
Front power | Pf |
| 20 | dBm |
PD reverse voltage | V |
| 15 | V |
Forward current (PD) | Im |
| 2 | mA |
Operation temperature | To | -40 | +85 | °C |
Storage temperature | Ts | -40 | +85 | °C |
Storage relative humdity | Sr |
| 85 | % |
Typical Data
10G
20G
Dimensions and Pin definitions
Outline drawings
Unit (mm)
Lead# | Function | Lead# | Function |
1 | Thermistor | 6 | TEC (+) |
2 | Thermistor | 7 | TEC (-) |
3 | LD (-) | 8 | LD-(RF) |
4 | PD (+) | 9 | LD+/GND |
5 | PD (-) |
|
|
Application
● Direct modulation
● High speed optical communications
● Gain switching
● Quantum Random Number Generation
● RF Photonics
● Laboratory testing and measurement
Product model
LP-ML1001C-55-FACentral wavelength: 1550nm
Output power: 6.31mW
Bandwidth: 18GHz
Package: 7pin - RF
LP-ML1001B-55-FACentral wavelength: 1550nm
Output power: 6.31mW
Bandwidth: 20GHz
Package: 7pin - RF
LP-ML1001D-31-FACentral wavelength: 1310nm
Output power: 6.31mW
Bandwidth: 20GHz
Package: 7pin - RF
LP-ML1001B-31-FACentral wavelength: 1310nm
Output power: 6.31mW
Bandwidth: 15GHz
Package: 7pin - RF
LP-ML1001A-31-FACentral wavelength: 1310nm
Output power: 6.31mW
Bandwidth: 10GHz
Package: 7pin - RF
LP-ML1001A-55-FACentral wavelength: 1550nm
Output power: 6.31mW
Bandwidth: 10GHz
Package: 7pin - RF
LP-ML1001C-31-FACentral wavelength: 1310nm
Output power: 6.31mW
Bandwidth: 18GHz
Package: 7pin - RF
Parameter
● High-Dynamic-Range
● 10 MHz to 18 GHz Bandwidth
● Low threshold current
● High output power
● 7pin butterfly package with SMA connector
● Operating case temperature: -40 to 85 °C
● High reliability
Optical and Electrical Specification (Tc=25°C)
Parameter
Symbol
Min
Typ
Max
Units
Note
Optical Output Power
P
8
10
dBm
1
Thershold current
Ith
10
mA
-
Operation current
Iop
55
100
mA
Operation voltage
Vop
1.5
2.5
V
-
Peak wavelength
λ
-
1310
-
nm
Any in C-band
Slope efficiency
SE
0.2
W/A
Side-mode suppression ratio
SMSR
30
dB
Rative Intensity Noise
RIN
-150
-130
dB/Hz
Bandwidth (-3dB,I=60mA)
S21
18
Ghz
-
Return loss
S11
-10
-6
dB
Input 1 dB Compression
18
dBm
Thermistor Resistance
Rth
10
Kohm
@25C,NTC, Beta 3930k
TEC current
It
1.2
A
2
TEC voltage
Vt
2.5
V
2
Capacitance (PD)
Ct
20
pF
Monitoring current
Im
0.05
2.0
mA
Dark current (PD)
Id
50
nA
Capacitance (PD)
Ct
20
pF
Optical Isolation
ISO
30
dB
No isolator option
Polarization Extinction ratio
PER
17
20
25
dB
Optical output connector
NA
FC/APC (PM Key aligned to slow axis)
RF input connector
NA
K102F/2.92 mm (K) Female
Input Impedance Matching
Ω
50
ohm
Notes: All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in.
1. Laser temperature set 25C, bias current at 55mA;
2. Operation case temperature -5~75C
Performance Specifications
Absolute Maximum Ratings
Parameter
Symbol
Min.
Max.
Unit
Laser diode forward current
If
120
mA
Laser diode reverse voltage
V
1
V
Front power
Pf
20
dBm
PD reverse voltage
V
15
V
Forward current (PD)
Im
2
mA
Operation temperature
To
-40
+85
°C
Storage temperature
Ts
-40
+85
°C
Storage relative humdity
Sr
85
%
Typical Data
10G
20G
Outline drawings
Unit (mm)
Lead#
Function
Lead#
Function
1
Thermistor
6
TEC (+)
2
Thermistor
7
TEC (-)
3
LD (-)
8
LD-(RF)
4
PD (+)
9
LD+/GND
5
PD (-)
● Direct modulation
● High speed optical communications
● Gain switching
● Quantum Random Number Generation
● RF Photonics
● Laboratory testing and measurement