Germanium photodiodes are commonly used to measure optical power in the NIR range, especially in cost-sensitive applications or where a large-area detector is needed. However, germanium detectors have a lower shunt resistance and higher dark current than similarly-sized InGaAs detectors, resulting in higher noise levels overall. Therefore, germanium detectors are well suited for applications where the signal being detected is much higher than the noise floor. GPD Optoelectronics offers an"HS" series of germanium photodiodes which have higher-than-typical shunt resistance for improved performance.
Product model
| 10 mm x 10 mm Ge Photodiode |
LP-GE-10X10 | Response wavelngth 800~1800nm, Material Ge, Active area 10mmx10mm | Response wavelength: 800-1800nm Material: Ge Active area: 10x10mm |
Parameter
Features
● Chip diameters from 1 mm to 25 mm
● Spectral response from 800 nm to 1800 nm
● High linearity > 10 dBm
● Multiple window and lens options
● Optical filters available (neutral density, bandpass, etc.)
● Thermoelectric cooling options
● Wide packaging variety: TO packages, BNC options, chip on ceramic submount, and more
Specifications
Specificationsa |
Sensor Material | Ge |
Wavelength Range | 800 - 1800 nm |
Peak Wavelength | 1550 nm (Typ.) |
Responsivityb | 0.95 A/W (Typ.) |
Active Area | 100 mm2 (10 mm x 10 mm) |
Rise/Fall Time (RL = 50 Ohms, 1 V) | 10 µs (Typ.) |
NEP (1550 nm)c | 4.0 x 10-12 W/Hz1/2 (Typ.) |
Dark Current (0.3 V) | 50 µA (Max) |
Capacitance | 80 nF (Typ.) @ 1 V
135 nF (Typ.) @ 0 V |
Shunt Resistance | 2000 Ohm (Typ.) |
Package | Ceramic |
Max Ratings |
Max Bias (Reverse) Voltage | 1 V |
Reverse Current | 10 mA |
Operating Temperature | -40 to 85 °C |
Storage Temperature | -40 to 125 °C |
Note: Unless otherwise noted, all measurements are performed at 25 °C ambient temperature.
Responsivity Specified at the Peak Wavelength
NEP is Specified for the Photovoltaic Mode
Responsivity Spectrum
Dark Current
This is a sample curve of the dark current. Actual performance will vary from photodiode to photodiode. Do not exceed the 1 V maximum reverse bias voltage.
Dimension
Application
● Optical power meters
● LED/LD characterization and burn-in diagnostics
● Spectroscopy
● LED/LD characterization
● Eye-safe laser detection sensors
Germanium photodiodes are commonly used to measure optical power in the NIR range, especially in cost-sensitive applications or where a large-area detector is needed. However, germanium detectors have a lower shunt resistance and higher dark current than similarly-sized InGaAs detectors, resulting in higher noise levels overall. Therefore, germanium detectors are well suited for applications where the signal being detected is much higher than the noise floor. GPD Optoelectronics offers an"HS" series of germanium photodiodes which have higher-than-typical shunt resistance for improved performance.
Product model
LP-GE-10X10Response wavelength: 800-1800nm
Material: Ge
Active area: 10x10mm
Parameter
● Chip diameters from 1 mm to 25 mm
● Spectral response from 800 nm to 1800 nm
● High linearity > 10 dBm
● Multiple window and lens options
● Optical filters available (neutral density, bandpass, etc.)
● Thermoelectric cooling options
● Wide packaging variety: TO packages, BNC options, chip on ceramic submount, and more
Specificationsa
Sensor Material
Ge
Wavelength Range
800 - 1800 nm
Peak Wavelength
1550 nm (Typ.)
Responsivityb
0.95 A/W (Typ.)
Active Area
100 mm2 (10 mm x 10 mm)
Rise/Fall Time (RL = 50 Ohms, 1 V)
10 µs (Typ.)
NEP (1550 nm)c
4.0 x 10-12 W/Hz1/2 (Typ.)
Dark Current (0.3 V)
50 µA (Max)
Capacitance
80 nF (Typ.) @ 1 V
135 nF (Typ.) @ 0 V
Shunt Resistance
2000 Ohm (Typ.)
Package
Ceramic
Max Ratings
Max Bias (Reverse) Voltage
1 V
Reverse Current
10 mA
Operating Temperature
-40 to 85 °C
Storage Temperature
-40 to 125 °C
Note: Unless otherwise noted, all measurements are performed at 25 °C ambient temperature.
Responsivity Specified at the Peak Wavelength
NEP is Specified for the Photovoltaic Mode
Responsivity Spectrum
Dark Current
This is a sample curve of the dark current. Actual performance will vary from photodiode to photodiode. Do not exceed the 1 V maximum reverse bias voltage.
● Optical power meters
● LED/LD characterization and burn-in diagnostics
● Spectroscopy
● LED/LD characterization
● Eye-safe laser detection sensors