LD-PD INC'S 10X10 photodiode is ideal for measuring both pulsed and CW fiber light sources by converting optical power into electrical current. The detector is ceramic with an anode and cathode.
The photodiode anode produces a current, which is a function of the incident light power and the wavelength. The responsivity, Ը(λ), can be read from the plot on the following page to estimate the amount of photocurrent. This can be converted to a voltage by placing a load resistor (RL) from the photodiode anode to the circuit ground. Where P is the power, the output voltage is expressed by
The bandwidth, fBW, and the rise time response, tR, are determined from the diode capacitance, CJ,
and the load resistance, RL, as shown below. The diode capacitance can be lowered by placing a bias voltage from the photodiode cathode to the circuit ground.
Product model
| 5mm Ge Photodiode |
GE-5X5-TO8 | Response wavelngth 800~1800nm, Material Ge, Active area 5mm x 5mm, TO8 Package | Response wavelength: 800-1800nm Material: Ge Active area: 5mm Package: TO-8 |
| 10mm Ge Photodiode |
GE-10X10-TO9 | Response wavelngth 800~1800nm, Material Ge, Active area 10mmx10mm, TO9 Package | Response wavelength: 800-1800nm Material: Ge Active area: 10mm Package: TO-9 |
Parameter
Features
● Large active area (10mm x 10mm)
● Low PDL
Specifications
Part Number | GE10X10-TO9 |
Key Feature | Largest Active Area |
Sensor Material | Ge |
Wavelength Range | 800 - 1800 nm |
Active Area | 100 mm2
(10 mm x 10 mm) |
Rise/Fall Timeb | 10 μs (Typ.) @ 1 V |
NEP | 4.0 x 10-12 W/Hz1/2 @ 1550 nmc |
Dark Current | 50 µA (Max) @ 0.3 V |
Junction Capacitance | 80 nF (Typ.) @ 1 V
135 nF (Typ.) @ 0 V |
Shunt Resistance | 2 kΩ (Min) |
Package | TO9 Package |
Spectral Response
The responsivity of a photodiode is a measure of its sensitivity to light and is defined as the ratio of the photocurrent IP to the incident light power P at a given wavelength:
In other words, it is a measure of the effectiveness of the conversion of light power into electrical current. Responsivity varies from lot to lot and with the wavelength of the incident light, applied reverse bias, and temperature. It increases slightly with applied reverse bias due to improved charge collection efficiency in the photodiode. An increase or decrease in the temperature changes the width of the band gap, which will vary inversely with the temperature change.
Recommended Circuit
Diameter
Application
● Power meter
● Fiber Sensor
LD-PD INC'S 10X10 photodiode is ideal for measuring both pulsed and CW fiber light sources by converting optical power into electrical current. The detector is ceramic with an anode and cathode.
The photodiode anode produces a current, which is a function of the incident light power and the wavelength. The responsivity, Ը(λ), can be read from the plot on the following page to estimate the amount of photocurrent. This can be converted to a voltage by placing a load resistor (RL) from the photodiode anode to the circuit ground. Where P is the power, the output voltage is expressed by
The bandwidth, fBW, and the rise time response, tR, are determined from the diode capacitance, CJ,
and the load resistance, RL, as shown below. The diode capacitance can be lowered by placing a bias voltage from the photodiode cathode to the circuit ground.
Product model
GE-5X5-TO8Response wavelength: 800-1800nm
Material: Ge
Active area: 5mm
Package: TO-8
GE-10X10-TO9Response wavelength: 800-1800nm
Material: Ge
Active area: 10mm
Package: TO-9
Parameter
● Large active area (10mm x 10mm)
● Low PDL
Part Number
GE10X10-TO9
Key Feature
Largest Active Area
Sensor Material
Ge
Wavelength Range
800 - 1800 nm
Active Area
100 mm2
(10 mm x 10 mm)
Rise/Fall Timeb
10 μs (Typ.) @ 1 V
NEP
4.0 x 10-12 W/Hz1/2 @ 1550 nmc
Dark Current
50 µA (Max) @ 0.3 V
Junction Capacitance
80 nF (Typ.) @ 1 V
135 nF (Typ.) @ 0 V
Shunt Resistance
2 kΩ (Min)
Package
TO9 Package
Spectral Response
The responsivity of a photodiode is a measure of its sensitivity to light and is defined as the ratio of the photocurrent IP to the incident light power P at a given wavelength:
In other words, it is a measure of the effectiveness of the conversion of light power into electrical current. Responsivity varies from lot to lot and with the wavelength of the incident light, applied reverse bias, and temperature. It increases slightly with applied reverse bias due to improved charge collection efficiency in the photodiode. An increase or decrease in the temperature changes the width of the band gap, which will vary inversely with the temperature change.
Recommended Circuit
Diameter
● Power meter
● Fiber Sensor