Our<10 GHz photodetectors contain a PIN photodiode that uses the photovoltaic effect to convert optical power into electrical current. When terminated into a 50 Ω resistor on an oscilloscope, the pulse width of a laser can be measured. When terminated into a 50 Ω resistor on a spectrum analyzer, the frequency response of a laser can be measured. EOT's <10 GHz photodetectors have their own internal bias supply consisting of a long life lithium battery. Plugging a coaxial cable into the photodetector's BNC output connector and terminating with 50 Ω on an oscilloscope or spectrum analyzer is all that is required for operation.
Product model
| Ge Large Active Area Photodetector: 800~1800nm, Ge, Biased, Conventional |
DET30B2(DP) | Spectrum response range 800~1800nm, Bandwidth 540kHz, Rise time (@50Ω) 650ns, Active Area φ3.0mm | Response wavelength: 800-1800nm Active area: 3mm Bandwidth: 540kHz |
Parameter
Features
● Ge detector with a spectral response range of 800 nm to 1800 nm, commonly used for near-infrared (NIR) light measurement;
● Biased detector, extremely low noise, fast response, no gain; large target area, near infrared photoelectric detection application;
● Fully compatible with THORLABS models;
● Outstanding performance, high cost-effectiveness, and comprehensive technical support; custom non-standard solutions available.
Key Parameter
Part Number | DET30B2(DP) | DET50B2(DP) |
Spectral response range | 800~1800nm | 800~1800nm |
Active area | φ3.0mm | φ5.0mm |
Bandwidth | 540kHz | 770kHz |
Rise time (@50Ω) | 650ns | 455ns |
NEP | 2.6 X 10-12W/Hz1/2 | 4.0 X 10-12W/Hz1/2 |
Dark current | 4.0 µA (Max) | 40 µA (Typ.)80 µA (Max) |
Junction capacitance | 6nF(Max) | 4000 pF (Max) |
Bias voltage | 1.8V | 5.0V |
Output current | 0~10mA |
Output voltage | ~9V(Hi-Z); ~170 mV(50Ω) |
Active area depth | 0.09" (2.2 mm) |
Detector net weight | 0.1kg |
Operating temperature | 10～ 50℃ |
Storage temperature | -20~70℃ |
Under-voltage index | Vout ≤9V(Hi-Z) |
Dimensions | 2.79" x 1.96" x 0.89" (70.9 mm x 49.8 mm x 22.5 mm) |
Power supply battery | Power switch | Signal interface | Battery monitoring | Rod interface | Optical interface |
A23, 12VDC, 40mAh | Slide switch | BNC female connector | Momentary button | M4 x 2 | SM1 x 1 SM0.5 x1 |
Response curve
Dimension
Product Configuration
Application
● Monitor the output of Q-switched lasers
● Monitor the output of mode-locked lasers
Ordering Info
PN# | Spectral response range | Active area | Rise Time (RT) | Bandwidth (BW) | Features |
DET30B2(DP) | 800 ～ 1800nm | Φ3.0mm | 650ns | 540kHz | Large active area, designed for near-infrared photodetection applications |
Our<10 GHz photodetectors contain a PIN photodiode that uses the photovoltaic effect to convert optical power into electrical current. When terminated into a 50 Ω resistor on an oscilloscope, the pulse width of a laser can be measured. When terminated into a 50 Ω resistor on a spectrum analyzer, the frequency response of a laser can be measured. EOT's <10 GHz photodetectors have their own internal bias supply consisting of a long life lithium battery. Plugging a coaxial cable into the photodetector's BNC output connector and terminating with 50 Ω on an oscilloscope or spectrum analyzer is all that is required for operation.
Product model
DET30B2(DP)Response wavelength: 800-1800nm
Active area: 3mm
Bandwidth: 540kHz
Parameter
● Ge detector with a spectral response range of 800 nm to 1800 nm, commonly used for near-infrared (NIR) light measurement;
● Biased detector, extremely low noise, fast response, no gain; large target area, near infrared photoelectric detection application;
● Fully compatible with THORLABS models;
● Outstanding performance, high cost-effectiveness, and comprehensive technical support; custom non-standard solutions available.
Part Number
DET30B2(DP)
DET50B2(DP)
Spectral response range
800~1800nm
800~1800nm
Active area
φ3.0mm
φ5.0mm
Bandwidth
540kHz
770kHz
Rise time (@50Ω)
650ns
455ns
NEP
2.6 X 10-12W/Hz1/2
4.0 X 10-12W/Hz1/2
Dark current
4.0 µA (Max)
40 µA (Typ.)80 µA (Max)
Junction capacitance
6nF(Max)
4000 pF (Max)
Bias voltage
1.8V
5.0V
Output current
0~10mA
Output voltage
~9V(Hi-Z); ~170 mV(50Ω)
Active area depth
0.09" (2.2 mm)
Detector net weight
0.1kg
Operating temperature
10～ 50℃
Storage temperature
-20~70℃
Under-voltage index
Vout ≤9V(Hi-Z)
Dimensions
2.79" x 1.96" x 0.89" (70.9 mm x 49.8 mm x 22.5 mm)
Power supply battery
Power switch
Signal interface
Battery monitoring
Rod interface
Optical interface
A23, 12VDC, 40mAh
Slide switch
BNC female connector
Momentary button
M4 x 2
SM1 x 1 SM0.5 x1
Response curve
Product Configuration
● Monitor the output of Q-switched lasers
● Monitor the output of mode-locked lasers
PN#
Spectral response range
Active area
Rise Time (RT)
Bandwidth (BW)
Features
DET30B2(DP)
800 ～ 1800nm
Φ3.0mm
650ns
540kHz
Large active area, designed for near-infrared photodetection applications