LD-PD PTE.LTD's InAsSb amplified photodetector has a photosensitivity range of 2-11um, 8 levels of adjustable gain, can realize quantitative photoelectric conversion, has a wide dynamic range, is suitable for various infrared photoelectric development scenarios, has excellent performance, is cost-effective, provides all-round technical support, and is often used in medium and long-wave infrared measurements.
Product model
| 2-5.3um InAsSb amplified photodetector |
InAsSb-2/5um-2X2-AG8-C | Spectral Response 2~5.3um; active area 2mm x 2mm, Response time constant 100ns | Response wavelength: 1-5.3um Active area: 2x2mm |
| 2-11um InAsSb amplified photodetector |
InAsSb-2/11um-1X1-AG8-C | Spectral Response 2~11um; active area 1mm X1mm, Response time constant 3ns | Response wavelength: 2-11um Active area: 1x1mm |
Parameter
Features
● The photosensitive range covers 2-11um, which is often used in medium and long-wave infrared measurement.
● Amplified detector, 8-level adjustable gain, quantitative photoelectric conversion.
● Wide dynamic range, uncooled, suitable for various photoelectric development scenarios.
● Excellent performance, high cost performance, all-round technical support
● Provide non-standard customized services
Specifications
Performance Specifications
Product Number | InAsSb-2/11um-1X1-AG8 | InAsSb-2/5um-2X2-AG8 |
Wavelength range | 2~11um | 2~5.3um |
Peak wavelength | 5.6um | 4.1um |
Response time constant | 3ns | 100ns |
D* | 7.0X107cm·Hz1/2/W | 1.0X109cm·Hz1/2/W |
Signal amplitude | Hi-Z load: 0~10V 50Ω load: 0~5V |
Gain adjustment method | Rotary gear adjustment, 0~70dB, 10dB per gear, 8 gears in total. Bandwidth is inversely proportional to gain. |
NEP | 1.4X10-9W/√ Hz 2.0X10-10W/√ Hz |
Photosensitive size | 1mm X 1mm | 2mm X 2mm |
Photosensitive surface depth | 0.13" (3.3 mm) |
Detector net weight | 0.10kg |
Operating temperature | 10～40℃ |
Storage temperature | -20～70℃ |
Appearance size | 2.79" X 2.07" X 0.89" (70.9 mm X 52.5 mm X 22.5 mm) |
Power supply interface | Power switch | Signal interface | Gain Adjustment | Support rod interface | Optical interface |
LUMBERG RSMV3 FEMALE | Slide switch with LED indicator | BNC female connector | 8-position knob | M4 X 2 | SM1 X 1 SM0.5 X 1 |
Eight-level quantitatively adjustable gain parameters
0dB | 10dB | 20dB | 30dB |
Gain (Hi-Z) | 1.51×103 V/A | Gain (Hi-Z) | 4.75×103 V/A | Gain (Hi-Z) | 1.5 ×104V/A | Gain (Hi-Z) | 4.75×104 V/A |
Gain (50Ω) | 0.75×103 V/A | Gain (50Ω) | 2.38×103 V/A | Gain (50Ω) | 0.75×104V/A | Gain (50Ω) | 2.38×104 V/A |
Bandwidth (BW) | 13MHz | Bandwidth (BW) | 1.7MHz | Bandwidth (BW) | 1.1MHz | Bandwidth (BW) | 300kHz |
Noise (RMS) | ≤250uV | Noise (RMS) | ≤250uV | Noise (RMS) | ≤250uV | Noise (RMS) | ≤250uV |
40dB | 50dB | 60dB | 70dB |
Gain (Hi-Z) | 1.51× 105 V/A | Gain (Hi-Z) | 4.75×105 V/A | Gain (Hi-Z) | 1.5×106V/A | Gain (Hi-Z) | 4.75×106 V/A |
Gain (50Ω) | 0.75× 105 V/A | Gain (50Ω) | 2.38×105 V/A | Gain (50Ω) | 0.75×106V/A | Gain (50Ω) | 2.38×106 V/A |
Bandwidth (BW) | 90kHz | Bandwidth (BW) | 28kHz | Bandwidth (BW) | 9kHz | Bandwidth (BW) | 3kHz |
Noise (RMS) | ≤250uV | Noise (RMS) | ≤250uV | Noise (RMS) | ≤300uV | Noise (RMS) | ≤400uV |
Signal bias | ±8mV(Typ.), ±12mV(Max) |
MCT Response Curve
Dimension
Application
● Mid- and long-wave infrared measurements
Ordering Info
Part Number | Sensitivity range | Photosensitive size | Gain range | Peak wavelength | characteristic |
InAsSb-2/11um-1X1-AG8 | 2~11um | 1mm X1mm | 0~70dB, Eight levels of quantitatively adjustable gain | 5.6um | Ultra-wideband infrared measurements |
InAsSb-2/5um-2X2-AG8 | 2~5um | 2mm X2mm | 4.1um | Large target surface |
LD-PD PTE.LTD's InAsSb amplified photodetector has a photosensitivity range of 2-11um, 8 levels of adjustable gain, can realize quantitative photoelectric conversion, has a wide dynamic range, is suitable for various infrared photoelectric development scenarios, has excellent performance, is cost-effective, provides all-round technical support, and is often used in medium and long-wave infrared measurements.
Product model
InAsSb-2/5um-2X2-AG8-CResponse wavelength: 1-5.3um
Active area: 2x2mm
InAsSb-2/11um-1X1-AG8-CResponse wavelength: 2-11um
Active area: 1x1mm
Parameter
● The photosensitive range covers 2-11um, which is often used in medium and long-wave infrared measurement.
● Amplified detector, 8-level adjustable gain, quantitative photoelectric conversion.
● Wide dynamic range, uncooled, suitable for various photoelectric development scenarios.
● Excellent performance, high cost performance, all-round technical support
● Provide non-standard customized services
Performance Specifications
Product Number
InAsSb-2/11um-1X1-AG8
InAsSb-2/5um-2X2-AG8
Wavelength range
2~11um
2~5.3um
Peak wavelength
5.6um
4.1um
Response time constant
3ns
100ns
D*
7.0X107cm·Hz1/2/W
1.0X109cm·Hz1/2/W
Signal amplitude
Hi-Z load: 0~10V 50Ω load: 0~5V
Gain adjustment method
Rotary gear adjustment, 0~70dB, 10dB per gear, 8 gears in total. Bandwidth is inversely proportional to gain.
NEP
1.4X10-9W/√ Hz 2.0X10-10W/√ Hz
Photosensitive size
1mm X 1mm
2mm X 2mm
Photosensitive surface depth
0.13" (3.3 mm)
Detector net weight
0.10kg
Operating temperature
10～40℃
Storage temperature
-20～70℃
Appearance size
2.79" X 2.07" X 0.89" (70.9 mm X 52.5 mm X 22.5 mm)
Power supply interface
Power switch
Signal interface
Gain Adjustment
Support rod interface
Optical interface
LUMBERG
RSMV3 FEMALE
Slide switch with LED indicator
BNC female connector
8-position knob
M4 X 2
SM1 X 1
SM0.5 X 1
Eight-level quantitatively adjustable gain parameters
0dB
10dB
20dB
30dB
Gain (Hi-Z)
1.51×103 V/A
Gain (Hi-Z)
4.75×103 V/A
Gain (Hi-Z)
1.5 ×104V/A
Gain (Hi-Z)
4.75×104 V/A
Gain (50Ω)
0.75×103 V/A
Gain (50Ω)
2.38×103 V/A
Gain (50Ω)
0.75×104V/A
Gain (50Ω)
2.38×104 V/A
Bandwidth (BW)
13MHz
Bandwidth (BW)
1.7MHz
Bandwidth (BW)
1.1MHz
Bandwidth (BW)
300kHz
Noise (RMS)
≤250uV
Noise (RMS)
≤250uV
Noise (RMS)
≤250uV
Noise (RMS)
≤250uV
40dB
50dB
60dB
70dB
Gain (Hi-Z)
1.51× 105 V/A
Gain (Hi-Z)
4.75×105 V/A
Gain (Hi-Z)
1.5×106V/A
Gain (Hi-Z)
4.75×106 V/A
Gain (50Ω)
0.75× 105 V/A
Gain (50Ω)
2.38×105 V/A
Gain (50Ω)
0.75×106V/A
Gain (50Ω)
2.38×106 V/A
Bandwidth (BW)
90kHz
Bandwidth (BW)
28kHz
Bandwidth (BW)
9kHz
Bandwidth (BW)
3kHz
Noise (RMS)
≤250uV
Noise (RMS)
≤250uV
Noise (RMS)
≤300uV
Noise (RMS)
≤400uV
Signal bias
±8mV(Typ.), ±12mV(Max)
MCT Response Curve
● Mid- and long-wave infrared measurements
Part Number
Sensitivity range
Photosensitive size
Gain range
Peak wavelength
characteristic
InAsSb-2/11um-1X1-AG8
2~11um
1mm X1mm
0~70dB,
Eight levels of quantitatively adjustable gain
5.6um
Ultra-wideband infrared measurements
InAsSb-2/5um-2X2-AG8
2~5um
2mm X2mm
4.1um
Large target surface