LD-PD PTE.LTD's InAsSb amplified photodetector has a photosensitivity range of 2-11um, 8 levels of adjustable gain, can achieve quantitative photoelectric conversion, has a wide dynamic range, and is suitable for various infrared photoelectric development scenarios. It has excellent performance and high cost performance, provides all-round technical support, and is often used in medium and long-wave infrared measurements.
Product model
| 2-12um InAsSb amplified photodetector (sensitive type) |
InAsSb-2/12um-1X1-AG8-ST | Spectral Response 2~12um; active area 1mm x 1mm, Response time constant 1.5ns | Response wavelength: 2-12um Active area: 1x1mm |
| 2-5um InAsSb amplified photodetector (sensitive type) |
InAsSb-2/5um-1X1-AG8-ST | Spectral Response 2~5um; active area 1mm x 1mm, Response time constant ≤120ns | Response wavelength: 1-5.0um Active area: 1x1mm |
Parameter
Features
● The photosensitive range covers 2-11um, which is often used in medium and long-wave infrared measurement.
● Amplified detector, 8-level adjustable gain, quantitative photoelectric conversion.
● Wide dynamic range, uncooled, suitable for various photoelectric development scenarios.
● Excellent performance, high cost performance, all-round technical support
● Provide non-standard customized services
Specifications
Performance Specifications
Parameters | Value |
Wavelength range | 1-5um | 2-12um |
Peak wavelength | 4.5um | 10.6um |
Response time constant | ≤120ns | 1.5ns |
D* | 2.0X1010cm·Hz1/2/W | 1.0X107cm·Hz1/2/W | 7.0X108cm·Hz1/2/W |
Signal amplitude | Hi-Z load: 0 ~ 10V; 50Ω load: 0 ~ 5V |
Gain adjustment method | Rotary gear adjustment: 0~70dB, 10dB per gear, 8 gears in total. Bandwidth is inversely proportional to gain. |
Photosensitive size | 1mm×1mm |
Photosensitive surface depth | 0.13" (3.3 mm) |
Detector net weight | 0.10kg |
Operating temperature | 10-40℃ |
Storage temperature | -20-70℃ |
Appearance size | 2.79" X 2.07" X 0.89" (70.9 mm X 52.5 mm X 22.5 mm) |
Photoelectric response | ≥0.5A/W | ≥0.004A/W | ≥0.14A/W |
Optical immersion | With infiltration lens | No infiltration | With infiltration lens |
Power supply interface | Power switch | Signal interface | Gain Adjustment | Support rod interface | Optical interface |
LUMBERG RS MV3 FEMALE | Slide switch with LED indicator | BNC female connector | 8-position knob | M4×2 | SM1 × 1 SM0.5 × 1 |
Eight-level quantitatively adjustable gain parameters
0dB | 10dB | 20dB | 30dB |
Gain (Hi-Z) | 1.51× 103V/A | Gain (Hi-Z) | 4.75× 103V /A | Gain (Hi-Z) | 1.5 × 104V/A | Gain (Hi-Z) | 4.75× 104 V/A |
Gain (50Ω) | 0.75× 103V/A | Gain (50Ω) | 2.38× 103V /A | Gain (50Ω) | 0.75× 104V/A | Gain (50Ω) | 2.38× 104 V/A |
Bandwidth (BW) | 13MHz | Bandwidth (BW) | 1.7MHz | Bandwidth (BW) | 1.1MHz | Bandwidth (BW) | 300kHz |
Noise (RMS) | ≤250uV | Noise (RMS) | ≤250uV | Noise (RMS) | ≤250uV | Noise (RMS) | ≤250uV |
40dB | 50dB | 60dB | 70dB |
Gain (Hi-Z) | 1.51× 105V/A | Gain (Hi-Z) | 4.75× 105V/A | Gain (Hi-Z) | 1.5 × 106V/A | Gain (Hi-Z) | 4.75× 106 V/A |
Gain (50Ω) | 0.75× 105V/A | Gain (50Ω) | 2.38× 105V/A | Gain (50Ω) | 0.75× 106V/A | Gain (50Ω) | 2.38× 106 V/A |
Bandwidth (BW) | 90kHz | Bandwidth (BW) | 28kHz | Bandwidth (BW) | 9kHz | Bandwidth (BW) | 3kHz |
Noise (RMS) | ≤250uV | Noise (RMS) | ≤250uV | Noise (RMS) | ≤300uV | Noise (RMS) | ≤400uV |
Signal bias | ±8mV(Typ.),±12mV(Max) |
MCT Response Curve
Appendix 1: Optional Configuration Table
InAsSb Amplified Photodetector | Optional Configuration |
Product Name | Material | Type | Features | Wavelength range Photosensitive size | Reserve optional configuration |
PD: "Photodetector" | M: MCT Mercury Cadmium Telluride | A: Enlarged | A: Adjustable gain | P10： 1-5um, 1mm×1mm R10 ：2-12um, 1mm×1mm | S: Sensitive model in 2-12um |
Dimension
Application
● Mid- and long-wave infrared measurements
Product model
InAsSb-2/12um-1X1-AG8-STResponse wavelength: 2-12um
Active area: 1x1mm
InAsSb-2/5um-1X1-AG8-STResponse wavelength: 1-5.0um
Active area: 1x1mm
Parameter
● The photosensitive range covers 2-11um, which is often used in medium and long-wave infrared measurement.
● Amplified detector, 8-level adjustable gain, quantitative photoelectric conversion.
● Wide dynamic range, uncooled, suitable for various photoelectric development scenarios.
● Excellent performance, high cost performance, all-round technical support
● Provide non-standard customized services
Performance Specifications
Parameters
Value
Wavelength range
1-5um
2-12um
Peak wavelength
4.5um
10.6um
Response time constant
≤120ns
1.5ns
D*
2.0X1010cm·Hz1/2/W
1.0X107cm·Hz1/2/W
7.0X108cm·Hz1/2/W
Signal amplitude
Hi-Z load: 0 ~ 10V; 50Ω load: 0 ~ 5V
Gain adjustment method
Rotary gear adjustment: 0~70dB, 10dB per gear, 8 gears in total. Bandwidth is inversely proportional to gain.
Photosensitive size
1mm×1mm
Photosensitive surface depth
0.13" (3.3 mm)
Detector net weight
0.10kg
Operating temperature
10-40℃
Storage temperature
-20-70℃
Appearance size
2.79" X 2.07" X 0.89" (70.9 mm X 52.5 mm X 22.5 mm)
Photoelectric response
≥0.5A/W
≥0.004A/W
≥0.14A/W
Optical immersion
With infiltration lens
No infiltration
With infiltration lens
Power supply interface
Power switch
Signal interface
Gain Adjustment
Support rod interface
Optical interface
LUMBERG RS MV3 FEMALE
Slide switch with LED indicator
BNC female connector
8-position knob
M4×2
SM1 × 1
SM0.5 × 1
Eight-level quantitatively adjustable gain parameters
0dB
10dB
20dB
30dB
Gain (Hi-Z)
1.51× 103V/A
Gain (Hi-Z)
4.75× 103V /A
Gain (Hi-Z)
1.5 × 104V/A
Gain (Hi-Z)
4.75× 104 V/A
Gain (50Ω)
0.75× 103V/A
Gain (50Ω)
2.38× 103V /A
Gain (50Ω)
0.75× 104V/A
Gain (50Ω)
2.38× 104 V/A
Bandwidth (BW)
13MHz
Bandwidth (BW)
1.7MHz
Bandwidth (BW)
1.1MHz
Bandwidth (BW)
300kHz
Noise (RMS)
≤250uV
Noise (RMS)
≤250uV
Noise (RMS)
≤250uV
Noise (RMS)
≤250uV
40dB
50dB
60dB
70dB
Gain (Hi-Z)
1.51× 105V/A
Gain (Hi-Z)
4.75× 105V/A
Gain (Hi-Z)
1.5 × 106V/A
Gain (Hi-Z)
4.75× 106 V/A
Gain (50Ω)
0.75× 105V/A
Gain (50Ω)
2.38× 105V/A
Gain (50Ω)
0.75× 106V/A
Gain (50Ω)
2.38× 106 V/A
Bandwidth (BW)
90kHz
Bandwidth (BW)
28kHz
Bandwidth (BW)
9kHz
Bandwidth (BW)
3kHz
Noise (RMS)
≤250uV
Noise (RMS)
≤250uV
Noise (RMS)
≤300uV
Noise (RMS)
≤400uV
Signal bias
±8mV(Typ.),±12mV(Max)
MCT Response Curve
Appendix 1: Optional Configuration Table
InAsSb Amplified Photodetector
Optional Configuration
Product Name
Material
Type
Features
Wavelength range Photosensitive size
Reserve optional configuration
PD: "Photodetector"
M: MCT Mercury Cadmium Telluride
A: Enlarged
A: Adjustable gain
P10： 1-5um, 1mm×1mm
R10 ：2-12um, 1mm×1mm
S: Sensitive model in 2-12um
● Mid- and long-wave infrared measurements