LD-PD PTE.LTD's InGaAs biased photodetector has a sensitivity range of 500nm~2600nm, extremely low noise, fast response, no gain, low cost, suitable for conventional photodetection applications, excellent performance, high cost performance, and provides omnidirectional technical support, which is often used in visible light and infrared light measurement.
Product model
| 900-2600nm InGaAs biased photodetector |
PDJBC9O10 | Spectral Response 900-2600nm; active area Φ1.0mm, rise time 25ns, bandwidth 14MHz | Response wavelength: 900-2600nm Active area: 1mm Bandwidth: 14MHz |
| 900-2600nm InGaAs biased photodetector |
PDJBC9O5 | Spectral Response 900-2600nm; active area Φ0.5mm, rise time 17ns, bandwidth 20.6MHz | Response wavelength: 900-2600nm Active area: 0.5mm Bandwidth: 20.6MHz |
| 800-1700nm InGaAs biased photodetector |
PDJBC8J20 | Spectral Response 800-1700nm; active area Φ2.0mm, rise time 30ns, bandwidth 11.7MHz | Response wavelength: 800-1700nm Active area: 2mm Bandwidth: 11.7MHz |
| 900-1700nm InGaAs biased photodetector |
PDJBC9N10 | Spectral Response 900-1700nm; active area Φ1.0mm, rise time 10ns, bandwidth 35MHz | Response wavelength: 900-1700nm Active area: 1mm Bandwidth: 35MHz |
| 500-1700nm InGaAs biased photodetector |
PDJBC5I10 | Spectral Response 500-1700nm; active area Φ1.0mm, rise time 5ns, bandwidth 70MHz | Response wavelength: 500-1700nm Active area: 1mm Bandwidth: 70MHz |
Parameter
Features
● The photosensitive range covers 500nm~2600nm, and is often used for visible light and infrared light measurement
● Biased detector, extremely low noise, fast response, no gain
● Low cost, suitable for conventional photoelectric detection applications
● Excellent performance, high cost performance, all-round technical support
Key Parameter
Parameters | Value |
Wavelength range | 500-1700nm | 900-1700nm | 800-1700nm | 900-2600nm |
Photosensitive size | Φ 1.0mm | Φ1.0mm | Φ2.0mm | Φ0.5mm | Φ1.0mm |
Bandwidth range | 70MHz | 35MHz | 11.7MHz | 20.6MHz | 14MHZ |
Rise time (@50Q) | 5ns | 10ns | 30ns | 17ns | 25ns |
NEP | 2.0x10-14W/Hz1/2 | 2.5x10-14W/Hz1/2 | 1.3x10-13W/Hz1/2 | 1.0x10-12W/Hz1/2 | 1.5x10-12W/Hz1/2 |
Dark current | 1.5nA(Typ.)/10nA(Max) | 1.0nA(Typ.)/25nA(Max) | 1.0nA(Typ.)/25nA(Max) | 2uA(Typ.)/20uA(Max) | 5uA(Typ.)/40uA(Max) |
Junction capacitance | 50pF(TyP.) | 80pF(TyP.) | 80pF(TyP.) | 140pF(TyP.) | 500pF(TyP.) |
Bias voltage | 5V | 1.8V |
Output current | 0~5mA |
Output voltage | ~9V(Hi-Z); ~170 mV(50Ω) |
Photosensitive surface depth | 0.09"(2.2 mm) |
Operating temperature | 10-50°C |
Storage temperature | -20-70°C |
Detector net weight | 0.10kg |
Undervoltage index | Vout ≤9V(Hi-Z) Vout ≤170mV(502) |
Appearance size | 2.79X1.96"X0.89"(70.9 mmX49.8 mm X 22.5 mm) |
Power supply battery | Power switch | Signal interface | Battery monitoring | Strut interface | Optical interface |
A23, 12VDC, 40mAh | Slide switch | BNC female socket | Momentary push button | M4X2 | SM1 X1 SM0.5 x 1 |
Response Curve
Product Configuration
Optional configuration table
Silicon based biasing photodetector | Optional Configuration |
Product Name | Material | Type | Feature | Wavelength range Active Area | Reserve Optional configuration |
PD:" Photodetector" | J: InGaAs | B: Bias type | C: Conventional type | 5110:500-1700nm, φ1.0mm |
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| 9N10:900-1700nm, φ1.0mm |
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| 8J20:800-1700nm, φ2.0mm |
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| 905:900-2600nm, φ0.5mm |
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| 9010:900-2600nm, φ1.0mm |
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Dimension
Application
● Visible and infrared light measurements
Product model
PDJBC9O10Response wavelength: 900-2600nm
Active area: 1mm
Bandwidth: 14MHz
PDJBC9O5Response wavelength: 900-2600nm
Active area: 0.5mm
Bandwidth: 20.6MHz
PDJBC8J20Response wavelength: 800-1700nm
Active area: 2mm
Bandwidth: 11.7MHz
PDJBC9N10Response wavelength: 900-1700nm
Active area: 1mm
Bandwidth: 35MHz
PDJBC5I10Response wavelength: 500-1700nm
Active area: 1mm
Bandwidth: 70MHz
Parameter
● The photosensitive range covers 500nm~2600nm, and is often used for visible light and infrared light measurement
● Biased detector, extremely low noise, fast response, no gain
● Low cost, suitable for conventional photoelectric detection applications
● Excellent performance, high cost performance, all-round technical support
Parameters
Value
Wavelength range
500-1700nm
900-1700nm
800-1700nm
900-2600nm
Photosensitive size
Φ 1.0mm
Φ1.0mm
Φ2.0mm
Φ0.5mm
Φ1.0mm
Bandwidth range
70MHz
35MHz
11.7MHz
20.6MHz
14MHZ
Rise time (@50Q)
5ns
10ns
30ns
17ns
25ns
NEP
2.0x10-14W/Hz1/2
2.5x10-14W/Hz1/2
1.3x10-13W/Hz1/2
1.0x10-12W/Hz1/2
1.5x10-12W/Hz1/2
Dark current
1.5nA(Typ.)/10nA(Max)
1.0nA(Typ.)/25nA(Max)
1.0nA(Typ.)/25nA(Max)
2uA(Typ.)/20uA(Max)
5uA(Typ.)/40uA(Max)
Junction capacitance
50pF(TyP.)
80pF(TyP.)
80pF(TyP.)
140pF(TyP.)
500pF(TyP.)
Bias voltage
5V
1.8V
Output current
0~5mA
Output voltage
~9V(Hi-Z);
~170 mV(50Ω)
Photosensitive surface depth
0.09"(2.2 mm)
Operating temperature
10-50°C
Storage temperature
-20-70°C
Detector net weight
0.10kg
Undervoltage index
Vout ≤9V(Hi-Z) Vout ≤170mV(502)
Appearance size
2.79X1.96"X0.89"(70.9 mmX49.8 mm X 22.5 mm)
Power supply battery
Power switch
Signal interface
Battery monitoring
Strut interface
Optical interface
A23, 12VDC, 40mAh
Slide switch
BNC female socket
Momentary push button
M4X2
SM1 X1
SM0.5 x 1
Response Curve
Product Configuration
Optional configuration table
Silicon based biasing photodetector
Optional Configuration
Product Name
Material
Type
Feature
Wavelength range
Active Area
Reserve Optional configuration
PD:" Photodetector"
J: InGaAs
B: Bias type
C: Conventional type
5110:500-1700nm, φ1.0mm
9N10:900-1700nm, φ1.0mm
8J20:800-1700nm, φ2.0mm
905:900-2600nm, φ0.5mm
9010:900-2600nm, φ1.0mm
● Visible and infrared light measurements