The InGaAs Amplified Photodetector has a photosensitivity range of 800nm~1700nm, fixed gain, and can achieve quantitative photoelectric conversion. It has sufficient gain while ensuring high bandwidth performance. It is suitable for the development of photoelectric detection applications with weak light intensity and fast speed. It has excellent performance and high cost performance, provides all-round technical support, and is often used in near-infrared light measurement.
Product model
| 800-1700nm InGaAs Amplified Photodetector |
PDJAF8J5-S | Spectral Response 800-1700nm; Photosensitive size Φ0.5mm, , fixed gain 1×10¹¹V/A±10%, bandwidth 20MHz | Response wavelength: 800-1700nm Active area: 0.5mm Bandwidth: 20Hz |
Parameter
Features
● Sensing range of 800nm to 1700nm, often used in near-infrared light measurements
● Amplified detector, fixed gain, quantitative photoelectric conversion
● With sufficient gain
● At the same time, it guarantees high bandwidth performance and is suitable for the development of photoelectric detection applications with weak light intensity and fast speed
● Excellent performance, high cost performance, and comprehensive technical support
● Provide non-standard customization services
Key Parameter
Parameters | Value |
Wavelength range | 800-1700nm | 900-2600nm |
Photosensitive size | Φ0.5mm | Φ150um | Φ0.5mm | Φ2.0mm | Φ1.0mm |
Bandwidth range | DC～150MHz | DC～380MHz | DC～20Hz | DC～5MHz | DC～25MHz |
Gain | Hi-Z Load:10kV/A； 50Ω Load:5kV/A | Hi-Z Load: 5×104V/A； 50Ω Load:2.5×104V/A | 1×1011V/A±10% | Hi-Z Load:500kV/A； 50Ω Load: 175kV/A | Hi-Z Load: 1×104V/A； 50Ω Load:5×103V/A |
Signal Amplitude | Hi-Z Load: 0～10V； 50Ω Load: 0～5V | Hi-Z Load: 0～10V； 50Ω Load: 0～5V | 0~10V | Hi-Z Load:0～10V； 50Ω Load:0~3.5V | Hi-Z Load: 0～10V； 50Ω Load: 0～5V |
NEP | 1.2×10-11W/Hz1/2 | 1.0 × 10-13W/Hz1/2 | 2×10-14W/Hz1/2 | 2.2×10-11W/Hz1/2 | 1.1×10-11W/Hz1/2 |
Sensitive Surface depth | 0.13" (3.3 mm) | 0.16" (4.1 mm) | 0.07" (1.8 mm) | 0.15" (3.7 mm) | 0.09" (2.2mm) |
Operating temperature | 10-40℃ | 10-50℃ |
Storage temperature | -20-70℃ | -25-70℃ |
Detector Net Weight | 0.10kg | 0.06kg | 0.10kg |
Appearance Dimensions | 2.79" X 2.07" X 0.89" (70.9 mm X 52.5 mm X 22.5 mm) | 2.79" X 1.96" X 0.89" (70.9 mm X 49.8 mm X 22.5 mm) | 2.79" X 1.96" X 0.89" (70.9 mm X 49.9 mm X 22.5 mm) | 2.79" X 1.96" X 0.8" (70.9 mm X 49.9 mm X 22.5 mm) | 2.79" X 1.96" X 0.89" (70.9 mm X 49.8 mm X 22.5 mm) |
Power Interface | Power supply | Power Switch | Signal Interface | Mounting Interface | Optical Interface |
LUMBERG R SMV3 FEMA LE | LDS12B(DP), ±12 VDC regulated linear power supply, 6W, 220VAC | Sliding Switch With LED Indicator | BNC Female socket | M4×2 | SM1× 1 SM0.5 × 1 |
Responsivity Curve
Product Configurations：
Attachment 1: Optional Configuration Table
Silicon-based amplified photodetector | Optional Configurations |
Product Name | Material | Type | Features | Wavelength Range Sensitive Area | Reserved Optional Configurations |
PD: "Photodetector" | J: InGaAs | A: Amplified Type | F: Fixed gain | 8J5：800-1700nm，Φ0.5mm | -s: 800-1700nm, Φ0.5mm for extremely weak light measurement |
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| 8J015：800-1700nm，Φ150um |
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| 8J20： 800-1700nm，Φ2.0mm |
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| 9O10：900-2600nm，Φ1.0mm |
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Attachment 2: Model and Part Number Cross-reference Table
Model | Part Number | Specs |
PDJAF8J5 | A80153440 | 800-1700nm InGaAs Amplified Photodetector, Photosensitive Area Φ0.5mm, Fixed gain 10kV/A, Bandwidth Range DC ～150MHz, Fast low-light measurement |
PDJAF8J5-S | A80153441 | 800-1700nm InGaAs Amplified Photodetector, Photosensitive Area Φ0.5mm, Fixed gain 1x1011V/A±10%, Bandwidth Range DC ～20MHz, Extremely weak light measurement |
PDJAF8J015 | A80153442 | 800-1700nm InGaAs Amplified Photodetector, Photosensitive Area Φ150mm, Fixed gain 5x104V/A, Bandwidth Range DC～380MHz, Fast low-light measurement |
PDJAF8J20 | A80153443 | 800-1700nm InGaAs Amplified Photodetector, Photosensitive Area Φ2.0mm, Fixed gain 500kV/A , Bandwidth Range DC ～5MHz, Large target surface |
PDJAF9O10 | A80153444 | 900-2600nm InGaAs Amplified Photodetector, Photosensitive Area Φ1.0mm, Fixed gain 1x104V/A, Bandwidth Range DC ～25kHz, Infrared extension |
Dimension
Unit (mm)
Application
● Near-infrared light measurement
Product model
PDJAF8J5-SResponse wavelength: 800-1700nm
Active area: 0.5mm
Bandwidth: 20Hz
Parameter
● Sensing range of 800nm to 1700nm, often used in near-infrared light measurements
● Amplified detector, fixed gain, quantitative photoelectric conversion
● With sufficient gain
● At the same time, it guarantees high bandwidth performance and is suitable for the development of photoelectric detection applications with weak light intensity and fast speed
● Excellent performance, high cost performance, and comprehensive technical support
● Provide non-standard customization services
Parameters
Value
Wavelength range
800-1700nm
900-2600nm
Photosensitive size
Φ0.5mm
Φ150um
Φ0.5mm
Φ2.0mm
Φ1.0mm
Bandwidth range
DC～150MHz
DC～380MHz
DC～20Hz
DC～5MHz
DC～25MHz
Gain
Hi-Z Load:10kV/A；
50Ω Load:5kV/A
Hi-Z Load: 5×104V/A；
50Ω Load:2.5×104V/A
1×1011V/A±10%
Hi-Z Load:500kV/A；
50Ω Load: 175kV/A
Hi-Z Load: 1×104V/A；
50Ω Load:5×103V/A
Signal Amplitude
Hi-Z Load: 0～10V；
50Ω Load: 0～5V
Hi-Z Load: 0～10V；
50Ω Load: 0～5V
0~10V
Hi-Z Load:0～10V；
50Ω Load:0~3.5V
Hi-Z Load: 0～10V；
50Ω Load: 0～5V
NEP
1.2×10-11W/Hz1/2
1.0 × 10-13W/Hz1/2
2×10-14W/Hz1/2
2.2×10-11W/Hz1/2
1.1×10-11W/Hz1/2
Sensitive Surface depth
0.13" (3.3 mm)
0.16" (4.1 mm)
0.07" (1.8 mm)
0.15" (3.7 mm)
0.09" (2.2mm)
Operating temperature
10-40℃
10-50℃
Storage temperature
-20-70℃
-25-70℃
Detector Net Weight
0.10kg
0.06kg
0.10kg
Appearance Dimensions
2.79" X 2.07" X 0.89" (70.9 mm X 52.5 mm X 22.5 mm)
2.79" X 1.96" X 0.89" (70.9 mm X 49.8 mm X 22.5 mm)
2.79" X 1.96" X 0.89" (70.9 mm X 49.9 mm X 22.5 mm)
2.79" X 1.96" X 0.8" (70.9 mm X 49.9 mm X 22.5 mm)
2.79" X 1.96" X 0.89" (70.9 mm X 49.8 mm X 22.5 mm)
Power Interface
Power supply
Power Switch
Signal Interface
Mounting Interface
Optical Interface
LUMBERG R SMV3 FEMA LE
LDS12B(DP), ±12 VDC regulated linear power supply, 6W, 220VAC
Sliding Switch
With LED Indicator
BNC Female socket
M4×2
SM1× 1
SM0.5 × 1
Responsivity Curve
Product Configurations：
Attachment 1: Optional Configuration Table
Silicon-based amplified photodetector
Optional Configurations
Product Name
Material
Type
Features
Wavelength Range Sensitive Area
Reserved Optional Configurations
PD: "Photodetector"
J: InGaAs
A: Amplified Type
F: Fixed gain
8J5：800-1700nm，Φ0.5mm
-s: 800-1700nm, Φ0.5mm for extremely weak light measurement
8J015：800-1700nm，Φ150um
8J20： 800-1700nm，Φ2.0mm
9O10：900-2600nm，Φ1.0mm
Attachment 2: Model and Part Number Cross-reference Table
Model
Part Number
Specs
PDJAF8J5
A80153440
800-1700nm InGaAs Amplified Photodetector, Photosensitive Area Φ0.5mm, Fixed gain 10kV/A, Bandwidth Range DC ～150MHz, Fast low-light measurement
PDJAF8J5-S
A80153441
800-1700nm InGaAs Amplified Photodetector, Photosensitive Area Φ0.5mm, Fixed gain 1x1011V/A±10%, Bandwidth Range DC ～20MHz, Extremely weak light measurement
PDJAF8J015
A80153442
800-1700nm InGaAs Amplified Photodetector, Photosensitive Area Φ150mm, Fixed gain 5x104V/A, Bandwidth Range DC～380MHz, Fast low-light measurement
PDJAF8J20
A80153443
800-1700nm InGaAs Amplified Photodetector, Photosensitive Area Φ2.0mm, Fixed gain 500kV/A , Bandwidth Range DC ～5MHz, Large target surface
PDJAF9O10
A80153444
900-2600nm InGaAs Amplified Photodetector, Photosensitive Area Φ1.0mm, Fixed gain 1x104V/A, Bandwidth Range DC ～25kHz, Infrared extension
Unit (mm)
● Near-infrared light measurement