InGaAs PD Module

Our InGaAs detectors have a sensitivity range of 400~1700nm and are commonly used for visible light and near-infrared light measurement. They are amplified detectors with 8 levels of adjustable gain and quantitative photoelectric conversion. They have a wide dynamic range and are suitable for various optoelectronic development scenarios and are widely used. They have excellent performance, high cost performance, and comprehensive technical support. We also provide non-standard customized services.

Product model

400~1700nm InGaAs Amplifier Adjustable GAIN

InGaAs-0.4/1.7um-1x1mm-AG8

Spectrum response range 400~1700nm, Response time constant 5ns, Active area 1mm x 1mm, Gain range 0 to 70dB

Response wavelength: 400-1700nm

Active area: 1x1mm

Parameter

Features

● InGaAs detector, with a sensitivity range of 400nm~1700nm, is commonly used for near-infrared light measurement;

● Amplified detector, 8-level adjustable gain, quantitative photoelectric conversion;

● Wide dynamic range, suitable for various photoelectric development scenarios, widely used;

● Excellent performance, high cost performance, all-round technical support;

● Provide non-standard customized services.

Specifications

Specification

PN#	InGaAs-0.4/1.7um-1X1mm-AG8		InGaAs-0.4/1.7um-2X2mm-AG8
Spectrum response range	400~1700nm
Response time constant	5ns		35ns
Gain	Hi-Z load: 1.51kV/A~4.75 MV/A; 50Ω load: 0.75kV/A~2.38 MV/A
Signal amplitude	Hi-Z load: 0~10V; 50Ω load: 0~5V
Gain adjustment method	Rotary gear adjustment, 0~70dB, 10dB per gear, 8 gears in total. Bandwidth is inversely proportional to gain.
NEP	1.4X10-12（W/Hz1/2）		5.2X10-13（W/Hz1/2）
Active area	1mm x 1mm		2mm x 2mm
Photosensitive surface depth	0.13" (3.3 mm)
Detector net weight	0.10kg
Operating temperature	10～40℃
Storage temperature	-20～70℃
Appearance size	2.79" x 2.07" x 0.89" (70.9 mm x 52.5 mm x 22.5 mm)
Power supply interface	Power switch	Signal interface	Gain adjustment	Support rod interface	Optical interface
LUMBERG RSMV3 FEMALE	Slide switch with LED indicator	BNC female socket	8-position knob	M4 x 2	SM1 x 1 SM0.5 x 1

Eight-level quantitatively adjustable gain parameters

0dB		10dB		20dB		30dB
Gain (Hi-Z)	1.51X103V/A	Gain (Hi-Z)	4.75X103V/A	Gain (Hi-Z)	1.5X104V/A	Gain (Hi-Z)	4.75X104V/A
Gain (50Ω)	0.75X103V/A	Gain (50Ω)	2.38X103V/A	Gain (50Ω)	0.75X104V/A	Gain (50Ω)	2.38X104V/A
Bandwidth (BW)	13MHz	Bandwidth (BW)	1.7MHz	Bandwidth (BW)	1.1MHz	Bandwidth (BW)	300kHz
Noise (RMS)	≤250μV	Noise (RMS)	≤250μV	Noise (RMS)	≤250μV	Noise (RMS)	≤250μV
40dB		50dB		60dB		70dB
Gain (Hi-Z)	1.51X105V/A	Gain (Hi-Z)	4.75X105V/A	Gain (Hi-Z)	1.5X106V/A	Gain (Hi-Z)	4.75X106V/A
Gain (50Ω)	0.75X105V/A	Gain (50Ω)	2.38X105V/A	Gain (50Ω)	0.75X106V/A	Gain (50Ω)	2.38X106V/A
Bandwidth (BW)	90kHz	Bandwidth (BW)	28kHz	Bandwidth (BW)	9kHz	Bandwidth (BW)	3kHz
Noise (RMS)	≤250μV	Noise (RMS)	≤250μV	Noise (RMS)	≤300μV	Noise (RMS)	≤400μV
Signal bias	±8mV(Typ.) ，±12mV(Max)

Spectral response curve

t22.1.png

Product Configuration

t22.3.png

Application

● Monitor the output of Q-switched lasers

● Monitor the output of mode-locked lasers

Ordering Info

PN#

Spectrum response range

Active area

Gain range

Characteristic

InGaAs-0.4/1.7um-1X1mm-AG8

400~ 1700nm

1mm X 1mm

0~70dB Eight-speed quantitative adjustable gain

Covering visible to infrared dual bands

InGaAs-0.4/1.7um-2X2mm-AG8

2mm X 2mm

Large target area

800~1700nm InGaAs Biased Conventional 800~1700nm InGaAs Adjustable GAIN

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