Our InGaAs detectors feature a spectral response range of 800–2600 nm, commonly used for near- to mid-infrared measurements.The amplified detector offers 8-stage adjustable gain for precise photoelectric conversion.With a wide dynamic range, it is suitable for various infrared optoelectronic development scenarios and enjoys broad applicability.It delivers outstanding performance, excellent cost-effectiveness, and comprehensive technical support.Custom non-standard solutions are also available upon request.
Product model
| 800~2600nm InGaAs Amplified Adjustable GAIN, Infrared extension |
InGaAs-0.8/2.2um-1x1mm-AG8 | Spectrum response range 800~2200nm, Response time constant 35ns, Active Area 1mm x 1mm | Response wavelength: 800-2600nm Active area: 1x1mm |
Parameter
Features
● InGaAs detector with a spectral response range of 800–2600 nm, ideal for near- to mid-infrared measurements;
● Amplified detector, 8-level adjustable gain, quantitative photoelectric conversion;
● Wide dynamic range, suitable for various infrared optoelectronic development applications;
● Exceptional performance, high cost-effectiveness, and comprehensive technical support;
● Custom non-standard solutions available on request
Specifications
Common parameters
Part Number | InGaAs-0.8/2.2um-1x1mm-AG8 | InGaAs-0.8/2.2um-2x2mm-AG8 | InGaAs-0.8/2.6um-1x1mm-AG8 | InGaAs-0.8/2.6um-2x2mm-AG8 |
Spectral Response Range | 800~2200nm | 800~2600nm |
Response time constant | 35ns | 200ns | 25ns | 233ns |
Gain | Hi-Z load: 1.51kV/A~4.75 MV/A; 50Ω load: 0.75kV/A~2.38 MV/A |
Signal amplitude | Hi-Z load: 0~10V; 50Ω load: 0~5V |
Gain adjustment method | Rotary gear adjustment, 0~70dB, 10dB per gear, 8 gears in total. Bandwidth is inversely proportional to gain. |
NEP | 1.0X10-13(W/Hz1/2) | 2.5X10-14(W/Hz1/2) | 1.0X10-12(W/Hz1/2) | 2.0X10-12(W/Hz1/2) |
Active Area | 1mm x 1mm | 2mm x 2mm | 1mm x 1mm | 2mm x 2mm |
Active Area depth | 0.13" (3.3 mm) |
Detector net weight | 0.10kg |
Operating temperature | 10～40℃ |
Storage temperature | -20～70℃ |
Dimensions | 2.79" X 2.07" X 0.89" (70.9 mm X 52.5 mm X 22.5 mm) |
Power supply interface | Power switch | Signal interface | Gain adjustment | Rod interface | Optical interface |
LUMBERG RSMV3 FEMALE | Slide switch with LED lights | BNC female connector | 8-position knob | M4 x 2 | SM1 x 1 SM0.5 x 1 |
Eight-level quantitatively adjustable gain parameters
0dB | 10dB | 20dB | 30dB |
Gain (Hi-Z) | 1.51X103V/A | Gain (Hi-Z) | 4.75X103V/A | Gain (Hi-Z) | 1.5X104V/A | Gain (Hi-Z) | 4.75X104V/A |
Gain (50Ω) | 0.75X103V/A | Gain (50Ω) | 2.38X103V/A | Gain (50Ω) | 0.75X104V/A | Gain (50Ω) | 2.38X104V/A |
Bandwidth (BW) | 13MHz | Bandwidth (BW) | 1.7MHz | Bandwidth (BW) | 1.1MHz | Bandwidth (BW) | 300kHz |
Noise (RMS) | ≤250μV | Noise (RMS) | ≤250μV | Noise (RMS) | ≤250μV | Noise (RMS) | ≤250μV |
40dB | 50dB | 60dB | 70dB |
Gain (Hi-Z) | 1.51X105V/A | Gain (Hi-Z) | 4.75X105V/A | Gain (Hi-Z) | 1.5X106V/A | Gain (Hi-Z) | 4.75X106V/A |
Gain (50Ω) | 0.75X105V/A | Gain (50Ω) | 2.38X105V/A | Gain (50Ω) | 0.75X106V/A | Gain (50Ω) | 2.38X106V/A |
Bandwidth (BW) | 90kHz | Bandwidth (BW) | 28kHz | Bandwidth (BW) | 9kHz | Bandwidth (BW) | 3kHz |
Noise (RMS) | ≤250μV | Noise (RMS) | ≤250μV | Noise (RMS) | ≤300μV | Noise (RMS) | ≤400μV |
Signal bias | ±8mV(Typ.) ，±12mV(Max) |
Response curve
Dimension
Product Configuration
Application
● Monitor the output of Q-switched lasers
● Monitor the output of mode-locked lasers
Ordering Info
PN# | Spectral response range | Active area | Gain range | Features |
InGaAs-0.8/2.2um-1x1mm-AG8 | 800~2200nm | 1mm x 1mm | 0~70dB eight-level quantitative adjustable gain | Standard model |
InGaAs-0.8/2.2um-2x2mm-AG8 | Large active area |
InGaAs-0.8/2.6um-1x1mm-AG8 | 800~2600nm | 2mm x 2mm | Extended coverage up to 2.6 μm |
InGaAs-0.8/2.6um-2x2mm-AG8 |
Product model
InGaAs-0.8/2.2um-1x1mm-AG8Response wavelength: 800-2600nm
Active area: 1x1mm
Parameter
● InGaAs detector with a spectral response range of 800–2600 nm, ideal for near- to mid-infrared measurements;
● Amplified detector, 8-level adjustable gain, quantitative photoelectric conversion;
● Wide dynamic range, suitable for various infrared optoelectronic development applications;
● Exceptional performance, high cost-effectiveness, and comprehensive technical support;
● Custom non-standard solutions available on request
Common parameters
Part Number
InGaAs-0.8/2.2um-1x1mm-AG8
InGaAs-0.8/2.2um-2x2mm-AG8
InGaAs-0.8/2.6um-1x1mm-AG8
InGaAs-0.8/2.6um-2x2mm-AG8
Spectral Response Range
800~2200nm
800~2600nm
Response time constant
35ns
200ns
25ns
233ns
Gain
Hi-Z load: 1.51kV/A~4.75 MV/A; 50Ω load: 0.75kV/A~2.38 MV/A
Signal amplitude
Hi-Z load: 0~10V; 50Ω load: 0~5V
Gain adjustment method
Rotary gear adjustment, 0~70dB, 10dB per gear, 8 gears in total. Bandwidth is inversely proportional to gain.
NEP
1.0X10-13(W/Hz1/2)
2.5X10-14(W/Hz1/2)
1.0X10-12(W/Hz1/2)
2.0X10-12(W/Hz1/2)
Active Area
1mm x 1mm
2mm x 2mm
1mm x 1mm
2mm x 2mm
Active Area depth
0.13" (3.3 mm)
Detector net weight
0.10kg
Operating temperature
10～40℃
Storage temperature
-20～70℃
Dimensions
2.79" X 2.07" X 0.89" (70.9 mm X 52.5 mm X 22.5 mm)
Power supply interface
Power switch
Signal interface
Gain adjustment
Rod interface
Optical interface
LUMBERG
RSMV3 FEMALE
Slide switch
with LED lights
BNC female connector
8-position knob
M4 x 2
SM1 x 1 SM0.5 x 1
Eight-level quantitatively adjustable gain parameters
0dB
10dB
20dB
30dB
Gain
(Hi-Z)
1.51X103V/A
Gain
(Hi-Z)
4.75X103V/A
Gain
(Hi-Z)
1.5X104V/A
Gain
(Hi-Z)
4.75X104V/A
Gain
(50Ω)
0.75X103V/A
Gain
(50Ω)
2.38X103V/A
Gain
(50Ω)
0.75X104V/A
Gain
(50Ω)
2.38X104V/A
Bandwidth
(BW)
13MHz
Bandwidth
(BW)
1.7MHz
Bandwidth
(BW)
1.1MHz
Bandwidth
(BW)
300kHz
Noise (RMS)
≤250μV
Noise (RMS)
≤250μV
Noise (RMS)
≤250μV
Noise (RMS)
≤250μV
40dB
50dB
60dB
70dB
Gain
(Hi-Z)
1.51X105V/A
Gain
(Hi-Z)
4.75X105V/A
Gain
(Hi-Z)
1.5X106V/A
Gain
(Hi-Z)
4.75X106V/A
Gain
(50Ω)
0.75X105V/A
Gain
(50Ω)
2.38X105V/A
Gain
(50Ω)
0.75X106V/A
Gain
(50Ω)
2.38X106V/A
Bandwidth
(BW)
90kHz
Bandwidth
(BW)
28kHz
Bandwidth
(BW)
9kHz
Bandwidth
(BW)
3kHz
Noise (RMS)
≤250μV
Noise (RMS)
≤250μV
Noise (RMS)
≤300μV
Noise (RMS)
≤400μV
Signal bias
±8mV(Typ.) ，±12mV(Max)
Response curve
Product Configuration
● Monitor the output of Q-switched lasers
● Monitor the output of mode-locked lasers
PN#
Spectral response range
Active area
Gain range
Features
InGaAs-0.8/2.2um-1x1mm-AG8
800~2200nm
1mm x 1mm
0~70dB eight-level quantitative adjustable gain
Standard model
InGaAs-0.8/2.2um-2x2mm-AG8
Large active area
InGaAs-0.8/2.6um-1x1mm-AG8
800~2600nm
2mm x 2mm
Extended coverage up to 2.6 μm
InGaAs-0.8/2.6um-2x2mm-AG8