The APD modules enable very low light levels to be detected quickly and simply in a variety of applications such as laser radar, rangefinding, data transfer or biomedical analysis.
The APD modules are based on low-noise avalanche photodiodes made of either silicon or InGaAs with a built-in pre-amplifier and high voltage supply. A temperature compensation function allows the APD to be operated at constant gain across a wide operating temperature range.
Product model
| InGaAS APD Photodiode Module |
AP-50M | Response wavelngth 900-1700nm, Bandwidth AC-50M; Material InGaAs, Responsivity 9A/W, Module; 100*100*25mm | Response wavelength: 900-1700nm |
| InGaAS APD Photodiode Module |
AP-100M | Response wavelngth 900-1700nm, Bandwidth AC-100M; Material InGaAs, Responsivity 9A/W, Module; 100*100*25mm | Response wavelength: 900-1700nm |
| InGaAS APD Photodiode Module |
AP-200M | Response wavelngth 900-1700nm, Bandwidth AC-200M; Material InGaAs, Responsivity 9A/W, Module; 100*100*25mm | Response wavelength: 900-1700nm |
| InGaAS APD Photodiode Module |
AP-350M | Response wavelngth 900-1700nm, Bandwidth AC-350M; Material InGaAs, Responsivity 9A/W, Module; 100*100*25mm | Response wavelength: 900-1700nm |
| InGaAS APD Photodiode Module |
AP-1.6G | Response wavelngth 900-1700nm, Bandwidth AC-1.6G; Material InGaAs, Responsivity 9A/W, Module; 100*100*25mm | Response wavelength: 900-1700nm |
| InGaAS APD Photodiode Module |
AP-800M | Response wavelngth 900-1700nm, Bandwidth AC-800M; Material InGaAs, Responsivity 9A/W, Module; 100*100*25mm | Response wavelength: 900-1700nm |
| InGaAS APD Photodiode Module |
APD-350M | Response wavelngth 900-1700nm, Bandwidth DC-350M; Material InGaAs, Responsivity 9A/W, Module; 100*100*25mm | Response wavelength: 900-1700nm |
| InGaAS APD Photodiode Module |
APD-200M | Response wavelngth 900-1700nm, Bandwidth DC-200M; Material InGaAs, Responsivity 9A/W, Module; 100*100*25mm | Response wavelength: 900-1700nm |
| InGaAS APD Photodiode Module |
APD-100M | Response wavelngth 900-1700nm, Bandwidth DC-100M; Material InGaAs, Responsivity 9A/W, Module; 100*100*25mm | Response wavelength: 900-1700nm |
| InGaAS APD Photodiode Module |
APD-50M | Response wavelngth 900-1700nm, Bandwidth DC-50M; Material InGaAs, Responsivity 9A/W, Module; 100*100*25mm | Response wavelength: 900-1700nm |
Parameter
Features
● Top illumination planar APD
● Low Dark Current
● High Responsivity
● High Reliability
● High Gain
● Built In High Voltage Supply
● APD Temperature Control
● Built in low noise isolation power supply
Specifications
Part Number | APD-50M | APD-100M | APD-200M | APD-350M | APD-800M | AP-1.6G | Unit |
Detector Type | InGaAs |
Wavelength | 800~1700 | 800~1700 | 800~1700 | 800~1700 | 800~1700 | 800~1700 | nm |
Bandwidth | DC-50M | DC-100M | DC-200M | DC-350M | AC-800M | AC-1.6G | HZ |
Responsivity | 9 | 9 | 9 | 9 | 9 | 9 | A/W |
Transimpedance gain | 300k | 300k | 50k | 50k | 50k | 300k | V/A |
Output impedance | 50 | 50 | 50 | 50 | 50 | 50 | Ω |
Saturation power | 4.2 | 4.2 | 4.2 | 4.2 | 4.2 | 4.2 | uW |
NEP | 0.46 | 0.46 | 0.46 | 0.46 | 0.46 | 0.46 | pW/√(Hz) |
Output Coupling | FC/APC | DC/AC | DC/AC | DC/AC | AC | AC |
|
Voltage | 5 | 5 | 5 | 5 | 12 | 12 | V |
Current | 3(max) | 3(max) | 3(max) | 3(max) | 3(max) | 3(max) | A |
Optic input | FC/APC | FC/APC | FC/APC | FC/APC | FC/APC | FC/APC |
|
RF Output | SMA | SMA | SMA | SMA | SMA | SMA |
|
Dimension | 100*100*25 | 100*100*25 | 100*100*25 | 100*100*25 | 100*100*25 | 100*100*25 | mm |
Application
● Monitoring the output of Q-switched lasers
● Monitoring the output of mode-locked lasers
● Monitoring the output of externally modulated CW lasers
● Time domain and frequency response measurements
The APD modules enable very low light levels to be detected quickly and simply in a variety of applications such as laser radar, rangefinding, data transfer or biomedical analysis.
The APD modules are based on low-noise avalanche photodiodes made of either silicon or InGaAs with a built-in pre-amplifier and high voltage supply. A temperature compensation function allows the APD to be operated at constant gain across a wide operating temperature range.
Product model
AP-50MResponse wavelength: 900-1700nm
AP-100MResponse wavelength: 900-1700nm
AP-200MResponse wavelength: 900-1700nm
AP-350MResponse wavelength: 900-1700nm
AP-1.6GResponse wavelength: 900-1700nm
AP-800MResponse wavelength: 900-1700nm
APD-350MResponse wavelength: 900-1700nm
APD-200MResponse wavelength: 900-1700nm
APD-100MResponse wavelength: 900-1700nm
APD-50MResponse wavelength: 900-1700nm
Parameter
● Top illumination planar APD
● Low Dark Current
● High Responsivity
● High Reliability
● High Gain
● Built In High Voltage Supply
● APD Temperature Control
● Built in low noise isolation power supply
Part Number
APD-50M
APD-100M
APD-200M
APD-350M
APD-800M
AP-1.6G
Unit
Detector Type
InGaAs
Wavelength
800~1700
800~1700
800~1700
800~1700
800~1700
800~1700
nm
Bandwidth
DC-50M
DC-100M
DC-200M
DC-350M
AC-800M
AC-1.6G
HZ
Responsivity
9
9
9
9
9
9
A/W
Transimpedance gain
300k
300k
50k
50k
50k
300k
V/A
Output impedance
50
50
50
50
50
50
Ω
Saturation power
4.2
4.2
4.2
4.2
4.2
4.2
uW
NEP
0.46
0.46
0.46
0.46
0.46
0.46
pW/√(Hz)
Output Coupling
FC/APC
DC/AC
DC/AC
DC/AC
AC
AC
Voltage
5
5
5
5
12
12
V
Current
3(max)
3(max)
3(max)
3(max)
3(max)
3(max)
A
Optic input
FC/APC
FC/APC
FC/APC
FC/APC
FC/APC
FC/APC
RF Output
SMA
SMA
SMA
SMA
SMA
SMA
Dimension
100*100*25
100*100*25
100*100*25
100*100*25
100*100*25
100*100*25
mm
● Monitoring the output of Q-switched lasers
● Monitoring the output of mode-locked lasers
● Monitoring the output of externally modulated CW lasers
● Time domain and frequency response measurements