The ultrafast photodetectors are best suited for measurement of optical waveforms from DC to 110GHz. Various models feature rise times as short as 1ps and cover the spectral range from 800 to 1700 nm.
All photodiodes are enclosed in compact and solid aluminum housings and can be biased with a battery or an external power supply.Perfect impedance matching and state-of-the-art microwave technology assure pulse form measurements without any ringing or artefacts. The customer is free to use a 50 Ω terminating resistor for highest speed operation, or a high impedance load for obtaining large signals. This guarantees maximum flexibility for diverse applications.
In combination with our high-gain amplifiers, the high-speed photodetectors are an advantageous alternative to the expensive and cumbersome avalanche photodiodes.
Product model
| 40GHz Microwave Photonics Receiver（Ultrafast Photodetectors) |
MR-40A-M | Response Spectrum 800-1700nm; Active Area Diameter Ф16μm, 3dB bandwidth 40 GHz, Reponsivity ≥0.22 A/W@1.55μm | Response wavelength: 800-1700nm Material: InGaAs Bandwidth: 40GHz |
Parameter
Features
● Ultra High-Speed Operation
● Rise Times: starting from 1ps
● Bandwidths: up to 110 GHz
● Spectral Ranges: 800-1700 nm
● Compact Design
● Battery or External Power Supply
● Models for FC/APC Receptacle or Pigtailed with SM Fiber
Specifications
Main Characteristics
Parameters | Symbol | Test condition | Min. | Typ. | Max. | Unit |
Operating Temperature | TO |
| 0 |
| 75 | ℃ |
Storage Temperature | Ts |
| -40 |
| 85 | ℃ |
Operating Wavelength | λ |
| 1300-1600nm,Typ:1550 | nm |
Bias Voltage | Vb |
| 3 | 5 | 9 | V |
Active Area Diameter | Ф |
|
| 16 |
| μm |
Saturation Optical Power | Ps | λ = 1550 nm, Vb= 5V |
| 10 |
| dBm |
Responsivity | R | λ= 1550 nm, Vb= 5V |
| 0.22 |
| A/W |
Dark Current | Id | Vb= 5 V |
| 0.5 |
| nA |
3dB Bandwidth | BW | Ps,o = 5 mW, Vb= 5V |
| 40 |
| GHz |
Connector | \ | \ | 2.92mm RF port,FC/APC connector |
Power Supply | \ | \ | No need external,Battery Built inside |
Bandwidth and Responsivity value test
10GHz Signal Waveform
18GHz Signal Waveform
Dimension
Unit in mm
Application
● Pulse Form Measurements
● Pulse Duration Measurements
● Precise Synchronization
● Mode Beating Monitoring
● Heterodyne Measurements
All photodiodes are enclosed in compact and solid aluminum housings and can be biased with a battery or an external power supply.Perfect impedance matching and state-of-the-art microwave technology assure pulse form measurements without any ringing or artefacts. The customer is free to use a 50 Ω terminating resistor for highest speed operation, or a high impedance load for obtaining large signals. This guarantees maximum flexibility for diverse applications.
In combination with our high-gain amplifiers, the high-speed photodetectors are an advantageous alternative to the expensive and cumbersome avalanche photodiodes.
Product model
MR-40A-MResponse wavelength: 800-1700nm
Material: InGaAs
Bandwidth: 40GHz
Parameter
● Ultra High-Speed Operation
● Rise Times: starting from 1ps
● Bandwidths: up to 110 GHz
● Spectral Ranges: 800-1700 nm
● Compact Design
● Battery or External Power Supply
● Models for FC/APC Receptacle or Pigtailed with SM Fiber
Main Characteristics
Parameters
Symbol
Test condition
Min.
Typ.
Max.
Unit
Operating Temperature
TO
0
75
℃
Storage Temperature
Ts
-40
85
℃
Operating Wavelength
λ
1300-1600nm,Typ:1550
nm
Bias Voltage
Vb
3
5
9
V
Active Area Diameter
Ф
16
μm
Saturation Optical Power
Ps
λ = 1550 nm, Vb= 5V
10
dBm
Responsivity
R
λ= 1550 nm, Vb= 5V
0.22
A/W
Dark Current
Id
Vb= 5 V
0.5
nA
3dB Bandwidth
BW
Ps,o = 5 mW, Vb= 5V
40
GHz
Connector
\
\
2.92mm RF port,FC/APC connector
Power Supply
\
\
No need external,Battery Built inside
Bandwidth and Responsivity value test
10GHz Signal Waveform
18GHz Signal Waveform
Unit in mm
● Pulse Form Measurements
● Pulse Duration Measurements
● Precise Synchronization
● Mode Beating Monitoring
● Heterodyne Measurements