InGaAs photodiode

This product is a high-performance photodetector designed for optical-to-electrical conversion in the 850 nm wavelength band. It features a built-in bias-T circuit, a 3-dB bandwidth of ≥30 GHz, and a responsivity of ≥0.4 A/W. This product is suitable for applications in 850 nm optical communications, advanced instrumentation, and related technical fields.

Product model

30GHz 850nm Photodetector

WOERBPL85B30

Response Spectrum 800-910nm; 3dB bandwidth ≥ 30 GHz, Reponsivity 0.45 A/W@850μm

Response wavelength: 800-910nm

Bandwidth: 30GHz

Parameter

Features

● Wide bandwidth

● Low dark current

● High reliability

Specifications

Product Specifications (All tests are conducted at 25℃ unless otherwise noted)

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Operating Wavelength	λ		800	850	910	nm
Responsivity	R	λ = 850 nm	0.4	0.45		A/W
Dark Current	Id	Vr = +4 V		10		nA
3 dB Bandwidth	BW	Popt = 0 dBm	30			GHz
Saturation Optical Power	Psat			8		dBm

Maximum Absolute Ratings

Parameter	Symbol	Rating	Unit
Optical Power	Ps	13	dBm
Reverse Voltage	Vr	10	V
Operating Temperature	Top	-40~+70	℃
Storage Temperature	Tstg	-55~+85	℃

Testing Curve

Dimensions and Pin definitions

unit (mm)

Precautions for Use

● Appropriate ESD protection measures should be taken to avoid electrostatic damage.

● Do not pull the fiber pigtail directly to prevent damage to the device.

● Keep the optical connector clean to avoid dust or other contaminants that may affect performance.

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