Photodetector Chip

InGaAs Avalanche Photodiode (APD) chips are semiconductor devices that are designed to detect weak optical signals in the infrared region. They are used in a variety of applications, such as fiber optic communications, LIDAR, and sensing. An APD is a type of photodiode that incorporates an internal gain mechanism, which allows it to achieve higher sensitivity than a standard photodiode. The gain is achieved through a process called avalanche multiplication, where a single photon creates an electron-hole pair, which then undergoes impact ionization, producing additional electron-hole pairs. This process results in an amplified output signal. InGaAs APDs are particularly useful for detecting wavelengths between 800 and 1700 nm.LD-PD INC is a company who design and manufacture InGaAs APD Chips.

Product model

InGaAs Φ 200μm APD Chip

LP-APD200

Response wavelngth 0.9~1.7μm, Responsivity 1.0A/W@1550nm, Active area size Φ200μm, Material InGaAs ( MOQ 50PCS )

Response wavelength: 900-1700nm

Material: InGaAs

Parameter

E/O Characteristics

Electro-Optical Characteristics (@ Tc=22±3℃)

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Response Spectrum	λ	—	950 ~ 1700			nm
Responsivity	Re	λ=1550nm Pin=1μW, M=1	0.90	1.00	—	A/W
Multiplication factor	M	λ=1550nm Pin=1μW, VR=VBR-3	10.00		—	—
Multiplication factor	M	λ=1550nm Pin=1μW, VR=VBR-1	30.00	—	—	—
Dark Current	Id	VR=VBR-3, Pin=0μW	—	8.00	50.00	nA
-3dB Cut-off frequency	BW	M=10 RL=50Ω	0.60	1.25	—	GHz
Reverse Breakdown Voltage	VBR	IR =10μA, Pin=0μW	35.00		50.00	V
Capacitance	C	VR=VBR-3, f=1MHz	—	1.80	2.00	pF
Temperature Coefficient of VBR	γ	IR=10μA, Pin=0μW -55℃~+85℃	0.07	0.11	0.15	V/℃

Absolute Maximum Rating

Parameter	Symbol	Min.	Max.	Unit
APD Voltage supply	VPD	—	VBR	V
Operating Temperature	TC	-40	+85	⁰C
Storage Temperature	TSTG	-55	+125	⁰C
Forward Current	IF	—	5	mA
Reverse Current	IR	—	3	mA

Typical Performance Curves (@ Tc=22±3℃)

Outline Diagram and Die Dimensions

Parameter	Min.	Typ.	Max.	Unit	Notes
Die Width	375	385	395	µm
Die Length	375	385	395	µm
Thickness	115	125	135	µm
Detection Window	—	200	—	µm
Bonding Pad Diameter	—	80	—	µm	Au metal

Application

● Distance measurement

● Spatial light transmission

● OTDR

● Low-light-level detection

Φ300um PD300 InGaAs Photodiode Chip

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Φ200μm InGaAs APD Chip

Product model

Parameter