LD-PD's InGaAs pin structure based on InP by MOCVD method and planar diffusing technology. The sensitive areas of TO photodiode series products are φ75µm、φ300µm、φ500µm、φ1mm、φ2mm、φ3mmrespectively. The products with other sensitive area, shape or package style can also be provided according to the demand of users.
Product model
| PD1000 InGaAs Photodiode Chip |
PD1000 | Response wavelngth 1000-1680nm, Material InGaAs, Active area 1000um, Die Package, size 1150μm×1150μm （Min Order:100PCS） | Response wavelength: 1000-1680nm Material: InGaAs Active area: 1000um |
Parameter
Features
● High Responsivity, front side illuminated，double-side pads
● Φ=1mm, round optical window
● Optimized for Machane(CH4) detection(1654nm), improving responsivity in low-temperature environment
E/O Characteristics
The Opto-electronic Characteristics (@Tc=22±3℃)
Parameter | Test Condition | Min. | Typ. | Max. | Unit |
Responsivity1 | λ=1310nm | 0.90 | 0.95 | — | A/W |
Responsivity2 | λ=1550nm | 0.95 | 1.00 | — | A/W |
Dark Current | V=-5V | — | 0.8 | 3.0 | nA |
Breakdown Voltage | I=-10µA | 40.0 | — | — | V |
Capacitance | V=-5V,f=1MHz | — | 45 | 65 | pF |
Forward Voltage | I=1mA | — | 0.43 | 0.70 | V |
As shown in Figure 1 @ Vr=0V TC=22± 3℃
Responsivity, R (A/W)
Outline Diagram and Die Dimensions
As shown in figure 1
figure 1
Parameter | Min. | Typ. | Max. | Unit | Notes |
Die Width | 1140 | 1150 | 1160 | µm |
|
Die Length | 1140 | 1150 | 1160 | µm |
|
Detection Window | — | 1000 | — | µm |
|
Thickness | 190 | 200 | 210 | µm |
|
Bonding Pad Diameter | — | 150 | — | µm | For p-pad |
Note: The structure of PIN PD is planar and front illuminated with P electrode on the top and N electrode on the bottom.
Absolute Maximum Rating
Parameter | Rating |
Electrostatic Discharge (HBM) | ＞1200V |
Reverse Current | -10mA |
Forward Current | 10mA |
Reverse Voltage | -20V |
Operating Temperature | -40 to 85 ⁰C |
Storage Temperature | -40 to 125 ⁰C |
Attention:
Handle with care, InP is a brittle material. The device can be permanently damaged when exposed to ESD. Specifications are subject to change without notice.
Application
● Fiber communication
● Fiber sensor
Product model
PD1000Response wavelength: 1000-1680nm
Material: InGaAs
Active area: 1000um
Parameter
● High Responsivity, front side illuminated，double-side pads
● Φ=1mm, round optical window
● Optimized for Machane(CH4) detection(1654nm), improving responsivity in low-temperature environment
The Opto-electronic Characteristics (@Tc=22±3℃)
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Responsivity1
λ=1310nm
0.90
0.95
—
A/W
Responsivity2
λ=1550nm
0.95
1.00
—
A/W
Dark Current
V=-5V
—
0.8
3.0
nA
Breakdown Voltage
I=-10µA
40.0
—
—
V
Capacitance
V=-5V,f=1MHz
—
45
65
pF
Forward Voltage
I=1mA
—
0.43
0.70
V
As shown in Figure 1 @ Vr=0V TC=22± 3℃
Responsivity, R (A/W)
As shown in figure 1
figure 1
Parameter
Min.
Typ.
Max.
Unit
Notes
Die Width
1140
1150
1160
µm
Die Length
1140
1150
1160
µm
Detection Window
—
1000
—
µm
Thickness
190
200
210
µm
Bonding Pad Diameter
—
150
—
µm
For p-pad
Note: The structure of PIN PD is planar and front illuminated with P electrode on the top and N electrode on the bottom.
Absolute Maximum Rating
Parameter
Rating
Electrostatic Discharge (HBM)
＞1200V
Reverse Current
-10mA
Forward Current
10mA
Reverse Voltage
-20V
Operating Temperature
-40 to 85 ⁰C
Storage Temperature
-40 to 125 ⁰C
Attention:
Handle with care, InP is a brittle material. The device can be permanently damaged when exposed to ESD. Specifications are subject to change without notice.
● Fiber communication
● Fiber sensor