Photodetector Chip

InGaAs PIN photodiode series chips with low capacitance and large photosensitive surface are front-facing planar structures, and provide various models with φ1mm, φ2mm, medium 3mm, φ5mm circular photosensitive surfaces and 1.5mm×6mm square photosensitive surfaces. Some models provide low-capacitance versions with Features such as high bandwidth, high sensitivity, and high reliability can meet the requirements of hotoelectric alarm, laser.

Product model

1mm InGaAs PIN photodiode series chips

LP-LC1

Response wavelngth 900-1700nm, responsivity: 0.65A/W@1.064µm or 0.95A/W@1.55µm, Material InGaAs, Active area 1mm, Die Package, （Min Order:100PCS）

Response wavelength: 900-1700nm

Material: InGaAs

Active area: 1mm

5mm InGaAs PIN photodiode series chips

LP-LC5

Response wavelngth 900-1700nm, responsivity:0.65A/W@1.064µm or 0.95A/W@1.55µm, Material InGaAs, Active area 5mm, Die Package, （Min Order:100PCS）

Response wavelength: 900-1700nm

Material: InGaAs

Active area: 5mm

3mm InGaAs PIN photodiode series chips

LP-LC3

Response wavelngth 900-1700nm, responsivity:0.65A/W@1.064µm or 0.95A/W@1.55µm, Material InGaAs, Active area 3mm, Die Package, （Min Order:100PCS）

Response wavelength: 900-1700nm

Material: InGaAs

Active area: 3mm

2mm InGaAs PIN photodiode series chips

LP-LC2

Response wavelngth 900-1700nm, responsivity:0.65A/W@1.064µm or 0.95A/W@1.55µm, Material InGaAs, Active area 2mm, Die Package, （Min Order:100PCS）

Response wavelength: 900-1700nm

Material: InGaAs

Active area: 2mm

Parameter

Features

● Provide ultra-low low capacitance option

● Active area 1mm~5mm

● Provide chip or TO package

● Accept customized requirements

Specifications

Main performance indicators

Technical indicators

Symbol

Unit

category

Model

LP-LC1

LP-LC2

LP-LC3

LP-LC5

LP-LC1.5

Typ

Max

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

Active Area

mm

Ordinary

φ1

φ2

φ3

φ5

1.5×6

low capacitance

Response time*

t

ns

Ordinary

5

17

35

117

45

low capacitance

2

9

17

22

-3dB Bandwidth

f₃dB

MHz

Ordinary

75

20

10

3

10

low capacitance

150

40

20

7

20

Capacitance

Cv

pF

Ordinary

40 @1V

130@1V

300@1V

850 @1V

1100@1V

low capacitance

25@1V

70@1V

180 @1V

400@1N

520@1V

Cv

Ordinary

30 @5V

100 @5V

200 @5V

750 @2V

960 @2V

low capacitance

15 @5V

50 @5V

100@5V

300 @2V

380 @2V

Cv

Ordinary

20 @25V

75 @25V

170@25V

600@5V

770@5V

low capacitance

10 @25V

35 @25V

90@25V

200@5V

260@5V

Reverse breakdown

voltage

V

Ordinary

20

15

10

low capacitance

10

Dark Current

Io

nA

Ordinary

1

2

5

20

30

low capacitance

3

6

15

60

100

Quality reliability, The product meets the requirements of Telcordia-GR-468-CORE for product reliability.

Absolute Maximum Ratings

Technical indicators	Symbol	Index value	Unit
Average forward current	I	100	mA
Total power consumption	PTon	100	mW
Average photocurrent	Ip	100	mA
Storage temperature	Tstg	-60~125	℃
Operating temperature	T	-40~85	℃
Soldering temperature	Tp	260	℃

*Pin soldering only, 5s

Technical indicators	Symbol	Min	Typ	Max	Unit
Operating Voltage	Vop	0	5	VBR-5	V
Spectral range	△λ	900		1700	nm
Responsiveness	R1064	0.60	0.65		A/W
Responsiveness	R1550	0.95	1.05		A/W

Application

● Photoelectric alarm

● Optical power meter

● Instrumentation

● Lidar

15mm Large Area InGaAs/InP PIN Photodiode Chip Φ1mm PD1000 InGaAs Photodiode Chip

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Φ1~5mm Low capacitance and Large Active Area InGaAs PD Chips

Product model

Parameter