Photodetector Chip

LD-PD's InGaAs pin structure based on InP by MOCVD method and planar diffusing technology. The sensitive areas of TO photodiode series products are φ5mm、φ10mm、φ15mm respectively. The products with other sensitive area, shape or package style can also be provided according to the demand of users.

Product model

15mm Large Area InGaAs/InP PIN Photodiode Chip

LP-PD-D15

Response wavelngth 900-1650nm, responsivity: 0.9A/W@1.31µm or 0.95A/W@1.55µm, Material InGaAs/InP, Active area Diameter 15mm, Die Package, （Min Order:100PCS）

Response wavelength: 900-1650nm

Material: InGaAsP/InP

Active area: 15mm

Parameter

Features

● 15mm Active diameters

● High responsivity

● Low capacitance

● Low dark current

● High shunt resistance

Specifications

Parameters (Tc=25℃)

PARAMETER	SYMBOL	MIN	TYP	MAX	UNIT	TEST CONDITIONS
Response range	λ	900		1650	nm
Responsivity	R	0.85	0.9		A/W	λ = 1310 nm
			0.95			λ = 1550 nm
			0.2			λ = 850 nm
Dark current	I_D	40		150	nA	V_R = -2 V
Capacitance	C		60		nF	V_R = -2 V, f = 1 MHz

Absolute Maximum Ratings

PARAMETER	SYMBOL	VALUE	UNIT
Reverse voltage	VRmax	5	V
Forward current	—	10	mA
Operating temperature	Topr	-40 to +85	℃
Storage temperature	Tstg	-55 to +125	℃

Dimension

Dimensions Diagram (mm)

Dimension Parameter

PARAMETER	SYMBOL	VALUE	UNIT
Active area diameter	D	15	mm
Bond pad diameter	—	200	µm
Die size	—	15.3 × 15.3	mm
Die thickness	t	180 ± 20	µm

Precautions for use

This chip is susceptible to damage as a result of ESD. Use of ground straps, antistatic mats, and other standard ESD protective equipment is requisite when handling or testing an InGaAs or GaAs PIN/APD chip.

Application

● Monitoring

● Fiber-optic Instruments

● Data Communications

Φ1mm InGaAs APD Four-quadrant photodetector chip Φ1~5mm Low capacitance and Large Active Area InGaAs PD Chips

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