InGaAs APD Four-quadrant photodetector chip is a high performance near infrared photodetector chip.The spectral response range is 0.9~1.7μm, which has high detection sensitivity, high spatial resolution and fast response speed. It is widely used in alignment detection, precision displacement measurement, vibration detection, Angle measurement, guidance and other applications.
Product model
| InGaAs APD Four-quadrant photodetector chip |
OVQT-QA1000 | Response Spectrum 900~1700nm, Photosensitive surface diameter 4x1.5mm, Response Time 1.5ns MOQ:20 PCs | Response wavelength: 900-1700nm Material: InGaAs Active area: 4x1.5mm Package: Chip |
Parameter
Features
● Positive view of the planar structure
● The quadrant interval is small and the crosstalk is low
● Low dark current, high reliability
● Chip or TO package is provided
Specifications
Part Nnumber：OVQT-QA1000 |
Parameter | Symbol | Unit | Measurement conditions | Min | Typ | Max |
Photosensitive surface diameter |
| μm | - | 1000 |
Quadrant interval | d | μm | - | 100 |
Reverse Breakdown Voltage | VBR | Vm | R=100uA，No light | 40 | - | 60 |
Responsivity | Re | A/W | 1550nm，1μW M=1 | 0.9 | - | - |
Response Time | t | ns | F=1MHz,RL=5Ω | - | 1.5 | 3 |
Dark current | ID | nA | M=10 | - | 25 | 100 |
Crosstalk | SL |
| M=10 | - | 10% | - |
Capacitance | C | pF | F=1MHz,M=10 | - | 12 | 15 |
Maximum available gain (MAG) | M | V | VBR_1 | 20 | - | - |
Breakdown voltage temperature coefficient | n | V/℃ | -40~+85℃ | - | 0.1 | 0.15 |
Reliability of quality: The product meets the Telcordia-GR-468-CORE requirements for product reliability.
Maximum absolute rating
Parameter | Symbol | Rating |
Operating Temperature | TC | -50~+85℃ |
Reverse operating voltage | VR | 0.99Vbr |
Forward Current | IF | 10mA |
Reverse current | IR | 2mA |
Package Size
Unit: μm
Part Number | Chip size（±10μm） | Photosensitive surface size（±2μm） | Diameter of pad（±2μm） | Chip thickness（±5μm） |
OVQT-QA1000 | 1250×1250 | 1000 | 80 | 150 |
Application
● Eye safety laser guidance, collimation, navigation, etc
● Free space optical communication
● Precision machining and other industrial control fields
Product model
OVQT-QA1000Response wavelength: 900-1700nm
Material: InGaAs
Active area: 4x1.5mm
Package: Chip
Parameter
● Positive view of the planar structure
● The quadrant interval is small and the crosstalk is low
● Low dark current, high reliability
● Chip or TO package is provided
Part Nnumber：OVQT-QA1000
Parameter
Symbol
Unit
Measurement conditions
Min
Typ
Max
Photosensitive surface diameter
μm
-
1000
Quadrant interval
d
μm
-
100
Reverse Breakdown Voltage
VBR
Vm
R=100uA，No light
40
-
60
Responsivity
Re
A/W
1550nm，1μW M=1
0.9
-
-
Response Time
t
ns
F=1MHz,RL=5Ω
-
1.5
3
Dark current
ID
nA
M=10
-
25
100
Crosstalk
SL
M=10
-
10%
-
Capacitance
C
pF
F=1MHz,M=10
-
12
15
Maximum available gain (MAG)
M
V
VBR_1
20
-
-
Breakdown voltage temperature coefficient
n
V/℃
-40~+85℃
-
0.1
0.15
Reliability of quality: The product meets the Telcordia-GR-468-CORE requirements for product reliability.
Maximum absolute rating
Parameter
Symbol
Rating
Operating Temperature
TC
-50~+85℃
Reverse operating voltage
VR
0.99Vbr
Forward Current
IF
10mA
Reverse current
IR
2mA
Unit: μm
Part Number
Chip size（±10μm）
Photosensitive surface size（±2μm）
Diameter of pad（±2μm）
Chip thickness（±5μm）
OVQT-QA1000
1250×1250
1000
80
150
● Eye safety laser guidance, collimation, navigation, etc
● Free space optical communication
● Precision machining and other industrial control fields