Photodetector Chip

LD-PD's InGaAs pin structure based on InP by MOCVD method and planar diffusing technology. The sensitive areas of TO photodiode series products are φ5mm、φ10mm、φ15mm respectively. The products with other sensitive area, shape or package style can also be provided according to the demand of users.

Product model

10mm Diameter InGaAs PIN Photodiode Chip

LP-PD-D10

Response wavelngth 900-1650nm, responsivity: 0.90A/W@1.31µm or 0.95A/W@1.55µm, Material InGaAs/InP, Active area Diameter 10mm, Die Package,

Response wavelength: 900-1650nm

Material: InGaAsP/InP

Active area: 10mm

Parameter

Features

● 10mm Active diameters

● High responsivity

● Low capacitance

● Low dark current

● High shunt resistance

Specifications

Specification (Tc=25℃)

Parameter	Symbol	Min	Typ	Max	Unit	Test Conditions
Response range	λ	900		1650	nm
Responsivity	R	0.85	0.90		A/W	λ= 1310nm
			0.95			λ= 1550nm
			0.2			λ=850nm
Dark current	ID		15	100	nA	VR=-2V
Capacitance	C		12		nF	VR=0V, f= 1MHz