High-speed photodetector modules are of interest for the development of next.generation optical communication linksin datacom and telecom. Since these R&D links are always a step ahead interms of symbol rates, photodetector modules with a RF bandwidth beyond state-of-the-art are needed at the receiver side. Furthermore, the high-speed performance of the photodetector modules makes them applicable to microwave photonics.
The photodetector chips inside the modules are based on mature InP technology and are fabricated at the wafer process line of offering Telcordia and space-qualifiedprocesses. The chips are packaged atFraunhofer HHl facilities.
Product model
| 110 GHz Photodetector Chip |
HSC110GHZ | Response wavelength 1260-1650nm, Bandwidth 110Hz, Material InP, Active Area Diameter 10um, Responsivity 0.45A/W@1550 | Response wavelength: 1260-1650nm Active area: 14um |
Parameter
Features
● Up to 100 GHz 3 dB-bandwidth
● Detection of 128 GBaud amplitudemodulated signals
● Operation in O-band and C+L-band
● Integrated bias network
● Low bias operation
Specifications
Test conditions: 25 °C, unless otherwise specified
Parameters | Symbol | Test condition | Min. | Typ. | Max. | Unit |
Operating Temperature | T0 |
| 0 |
| 75 | ℃ |
Storage Temperature | Ts |
| -40 |
| 85 | ℃ |
Operating Wavelength | λ |
| 1550 | nm |
Bias Voltage | Vb |
|
| 4 |
| V |
Active Area Diameter | Ф |
|
| 10 |
| μm |
Saturation Optical Power | Ps | λ = 1550 nm, Vb= 5 V | 13 |
|
| dBm |
Responsivity | R | λ = 1550 nm, Vb= 5 V |
| 0.45 |
| A/W |
Dark Current | Id | Vb= 5 V |
| 30 |
| nA |
3dB Bandwidth | BW | Ps,o = 5 mW, Vb= 4 V | 100 | 110 |
| GHz |
Bandwidth and Responsivity value test
Application
● Data communication
● Tele communication
● Systems measurement & -test
● Photonics microwave
The photodetector chips inside the modules are based on mature InP technology and are fabricated at the wafer process line of offering Telcordia and space-qualifiedprocesses. The chips are packaged atFraunhofer HHl facilities.
Product model
HSC110GHZResponse wavelength: 1260-1650nm
Active area: 14um
Parameter
● Up to 100 GHz 3 dB-bandwidth
● Detection of 128 GBaud amplitudemodulated signals
● Operation in O-band and C+L-band
● Integrated bias network
● Low bias operation
Test conditions: 25 °C, unless otherwise specified
Parameters
Symbol
Test condition
Min.
Typ.
Max.
Unit
Operating Temperature
T0
0
75
℃
Storage Temperature
Ts
-40
85
℃
Operating Wavelength
λ
1550
nm
Bias Voltage
Vb
4
V
Active Area Diameter
Ф
10
μm
Saturation Optical Power
Ps
λ = 1550 nm, Vb= 5 V
dBm
Responsivity
R
λ = 1550 nm, Vb= 5 V
0.45
A/W
Dark Current
Id
Vb= 5 V
30
nA
3dB Bandwidth
BW
Ps,o = 5 mW, Vb= 4 V
110
GHz
Bandwidth and Responsivity value test
● Data communication
● Tele communication
● Systems measurement & -test
● Photonics microwave