Photodetector Chip

This product is a 1310nm 100Gb/s InGaAs 1×4 array photodetector chip that performs photoelectric conversion and is suitable for applications in data communication, microwave photonics, and related fields.

Product model

1310nm 100Gb/s InGaAs 1×4 Array Photodetector Chip

APC-1310-1x4-100

Operating Wavelength 1310nm, Active Area Diameter 20μm, Reponsivity ≥0.76 A/W@1.55μm, 3 dB Bandwidth (50Ω TIA) 24GHz, MOQ:20 PCs

Operation Wavelength: 1310nm

Material: InGaAs

Parameter

Features

● Low capacitance

● Low dark current

● High responsivity

Specifications

Test conditions: 25 °C, unless otherwise specified

Parameters	Symbol	Test condition	Min	Typ	Max	Unit
Operating Temperature	T0		0		75	℃
Storage Temperature	Ts		-40		85	℃
Operating Wavelength	λ			1310		nm
Bias Voltage	Vb			3	6	V
Active Area Diameter	Ф			20		μm
Responsivity	R	λ = 1550 nm, Vb= 3 V		0.76		A/W
Dark Current	Id	Vb= 3 V		0.2	1.0	nA
Capacitance	C	Vb= 3 V		80		fF
Series Resistance	Rs			10		Ω
3 dB Bandwidth (50Ω Load)	BW	Ps,o = 0 dBm, Vb= 3 V		24		GHz

Dimensions and Pin definitions

1310nm 100Gb.png

Outline	Min	Typ	Max	Unit
Length	1050	1100	1150	μm
Width	240	290	340	μm
Thickness	140	150	160	μm

Precautions for Use

● Necessary ESD protection measures should be taken to prevent the chip from electrostatic damage.

● Extreme care is required when handling the chip, and vacuum suction is recommended for chip handling.

● Parameters such as wire bonding force and temperature must be set carefully to avoid damaging the chip.

2600nm Extended InGaAs/InP PIN PD Chip 850nm 100Gb/s InGaAs 1×4 Array Photodetector Chip

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