Extended InGaAs Photodiodes Chips, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 900 nm to 2600 nm.
Product model
| 1000um Extended InGaAs/InP PIN PD Chip |
LD-PD1000L-2600 | Response Range 900-2600nm, Active area diameter 1000um, Bare Chip | Response wavelength: 900-2600nm Material: InGaAsP/InP Active area: 1000um |
| 500um Extended InGaAs/InP PIN PD Chip |
LD-PD500L-2600 | Response Range 900-2600nm, Active area diameter 500um, Bare Chip | Response wavelength: 900-2600nm Material: InGaAsP/InP Active area: 500um |
| 300um Extended InGaAs/InP PIN PD Chip |
LD-PD300L-2600 | Response Range 900-2600nm, Active area diameter 300um, Bare Chip | Response wavelength: 900-2600nm Material: InGaAsP/InP Active area: 300um |
Parameter
Features
● High responsivity
● Cutoff wavelength: 2.5-2.6um
● Low dark current
● Top illuminated planar structure
Specifications
PARAMETER | SYMBOL | ACTIVE AREA (um) | MIN | TYP | MAX | UNIT | TEST CONDITIONS |
Response range | λ | All | 1000 |
| 2600 | nm |
|
Responsivity | R | All |
| 1.0 |
| A/W | λ=2300nm |
Capacitance | C | Φ300 |
| 120 |
| pF | VR=-1V, f= 1MHz |
Φ500 |
| 160 |
|
Φ1000 |
| 300 |
|
Dark current | ID | Φ300 |
| 1.0 | 2.0 | uA | VR=-0.5V |
Φ500 |
| 3.0 | 6.0 |
Φ1000 |
| 5.0 | 10.0 |
Breakdown | Vbr | All | 2 |
|
|
| I= 10uA |
Spectral Response
Absolute Maximum Ratings
PARAMETER | SYMBOL | VALUE | UNIT |
Reverse voltage | VRmax | 1 | V |
Forward Current |
| 10 | mA |
Operating temperature | Topr | -40 to +85 | ℃ |
Storage temperature | Tstg | -40 to +100 | ℃ |
Dimension Parameter
PARAMETER | SYMBOL | Φ300 | Φ500 | Φ1000 | UNIT |
Active area diameter | - | 300 | 500 | 1000 | µm |
Bond pad diameter | - | 80 | 80 | 120 | µm |
Die size | - | 420x420 | 600x600 | 1250x1250 | µm |
Die thickness | t | 180±20 | 180±20 | 180±20 | µm |
Precautions for use
This chip is susceptible to damage as a result of ESD. Use of ground straps, antistatic mats, and other standard ESD protective equipment is requisite when handling or testing an InGaAs or GaAs PIN/APD chip.
Application
● Gas analyzers
● Moisture meters
● Near-infrared sensing
● Optical power meters
Ordering Info
PN#LD-PD300L-2600
Response Range: 900-2600nm, Active area diameter:300um, Bare Chip
PN#LD-PD500L-2600
Response Range: 900-2600nm, Active area diameter:500um, Bare Chip
PN#LD-PD1000L-2600
Response Range: 900-2600nm, Active area diameter:1000um, Bare Chip
Product model
LD-PD1000L-2600Response wavelength: 900-2600nm
Material: InGaAsP/InP
Active area: 1000um
LD-PD500L-2600Response wavelength: 900-2600nm
Material: InGaAsP/InP
Active area: 500um
LD-PD300L-2600Response wavelength: 900-2600nm
Material: InGaAsP/InP
Active area: 300um
Parameter
● High responsivity
● Cutoff wavelength: 2.5-2.6um
● Low dark current
● Top illuminated planar structure
PARAMETER
SYMBOL
ACTIVE AREA (um)
MIN
TYP
MAX
UNIT
TEST CONDITIONS
Response range
λ
All
1000
2600
nm
Responsivity
R
All
1.0
A/W
λ=2300nm
Capacitance
C
Φ300
120
pF
VR=-1V, f= 1MHz
Φ500
160
Φ1000
300
Dark current
ID
Φ300
1.0
2.0
uA
VR=-0.5V
Φ500
3.0
6.0
Φ1000
5.0
10.0
Breakdown
Vbr
All
2
I= 10uA
Spectral Response
Absolute Maximum Ratings
PARAMETER
SYMBOL
VALUE
UNIT
Reverse voltage
VRmax
1
V
Forward Current
10
mA
Operating temperature
Topr
-40 to +85
℃
Storage temperature
Tstg
-40 to +100
℃
Dimension Parameter
PARAMETER
SYMBOL
Φ300
Φ500
Φ1000
UNIT
Active area diameter
-
300
500
1000
µm
Bond pad diameter
-
80
80
120
µm
Die size
-
420x420
600x600
1250x1250
µm
Die thickness
t
180±20
180±20
180±20
µm
Precautions for use
This chip is susceptible to damage as a result of ESD. Use of ground straps, antistatic mats, and other standard ESD protective equipment is requisite when handling or testing an InGaAs or GaAs PIN/APD chip.
● Gas analyzers
● Moisture meters
● Near-infrared sensing
● Optical power meters
PN#LD-PD300L-2600
Response Range: 900-2600nm, Active area diameter:300um, Bare Chip
PN#LD-PD500L-2600
Response Range: 900-2600nm, Active area diameter:500um, Bare Chip
PN#LD-PD1000L-2600
Response Range: 900-2600nm, Active area diameter:1000um, Bare Chip