Photodetector Chip

InGaAs Quadrant PIN Detector, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 4x3.0mm in diameter. Planar-passivated device structure.

Product model

3000um InGaAs Four Quadrants Monitor PD Chip

LP3000F4

Response Range 900-1650nm, Active area diameter 3000um, Bare Chip

Response wavelength: 900-1650nm

Material: InGaAs

Active area: 3000um

Parameter

Features

● Φ3500nm active area

● High responsivity

● Low capacitance

● Low dark current

● Top illuminated planar structure

Key Parameter

Parameters (Tc=25℃)

PARAMETER	SYMBOL	MIN	TYP	MAX	UNIT	TEST CONDITIONS
Response range	λ	900		1650	nm
Responsivity	R	0.85	0.90		A/W	λ= 1310nm
			0.95			λ= 1550nm
			0.2			λ=850nm
Dark current	ID		52.0	10.0	nA	VR=-5V
Capacitance	C		120	160	pF	VR=-5V, f= 1MHz

Absolute Maximum Ratings

PARAMETER	SYMBOL	VALUE	UNIT
Reverse voltage	VRmax	20	V
Operating temperature	Topr	-40 to +85	℃
Storage temperature	Tstg	-55 to +125	℃

Dimension

PARAMETER	SYMBOL	VALUE	UNIT
Active area diameter	D	3000	µm
Bond pad diameter	-	120	µm
Die size	-	3180x3180	µm
Die thickness	t	180±20	µm

Precautions for use

This chip is susceptible to damage as a result of ESD. Use of ground straps, antistatic mats, and other standard ESD protective equipment is requisite when handling or testing an InGaAs or GaAs PIN/APD chip.

Application

● Beam Alignment

● Optical Tracking,Positioning

● Laser Position Monitor

850-910nm 56Gbaud 1x4 Array PIN PD Chip LP1500F4 InGaAs Four Quadrants Monitor PD Chip

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LP3000F4 InGaAs Four Quadrants Monitor PD Chip

Product model

Parameter