Photodetector Chip

The LP-PD4x5032 is a high-performance 850-910nm 56Gbaud 1x4 Array PIN Photodiode (PD) chip designed by LD-PD PTE.LTD.. Engineered for next-generation optical communications, this array is optimized for high-speed data transmission in PAM4 applications.

Product model

850-910nm 56Gbaud 1x4 Array PIN PD Chip

LP-PD4x5032

Response wavelngth 840-910nm, Bandwidth 34GHz, Material InGaAs, Responsivity 0.55A/W@850nm or 0.65A/W@910nm

Operation Wavelength: 850 - 910nm

Bandwidth: 34GHz

Parameter

Features

● Bandwidth up to 34GHz/channel

● Anti-reflective for 850-910nm

● 250um diode pitch

● φ32um active area

● Low capacitance

● GSG Electrode Structure

Specifications

Parameter	Symbol	Min	Tpye	Max	Unit	Test conditionns
Response range	λ	840	850	910	nm
Responsivity	R		0.55		A/W	λ=850nm
Responsivity	R		0.65		A/W	λ=910nm
Dark current	ID		0.3	1.0	nA	VR=-5V
Capacitance	C		0.12	0.15	pF	VR=-2V, f= 1MHz
Bandwidth	Bw		34.0		GHz	VR=-2V 3dB down, RL=50Ω

Note: (Tc=25℃, Single Die)

Absolute Maximum Ratings

Parameter	Symbol	Value	Unit
Reverse voltage	VRmax	20	V
Operating temperature	Topr	-40 to +85	℃
Storage temperature	Tstg	-55 to +125	℃

Dimension

Dimensions Diagram ( µm)

850-910nm 56Gbaud 1x4 Array PIN PD Chip2.png

Dimension Parameter

Parameter	Symbol	Value	Unit
Active area diameter	D	32	µm
Bond pad size	-	60 x 70	µm
Die size	-	1000 x 250	µm
Diode pitch	-	250	um
Die thickness	t	150 ± 10%	µm

Precautions for use

This chip is susceptible to damage as a result of ESD. Use of ground straps, antistatic mats, and other standard ESD protective equipment is requisite when handling or testing an InGaAs or GaAs PIN/APD chip.

Application

● 400Gbps PAM4

● 200Gbps SFP+

● 4x100Gb ps QSFP

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