LD-PD PTE.LTD's silicon-based biased photodetector has a sensitive range of 200nm~1100nm, with extremely low noise, fast response, no gain, and low cost. It is suitable for conventional photodetection applications, has excellent performance, and is cost-effective. It provides full technical support and is often used in ultraviolet and visible light measurements.
Product model
| 320-1100nm silicon-based biased photodetector |
PDSBC3D100 | Spectral Response 320-1100nm; photosensitive size Φ10.0mm, rise time 35ns, bandwidth 10MHz | Response wavelength: 320–1100nm Active area: 10mm Bandwidth: 10MHz |
| 350-1100nm silicon-based biased photodetector |
PDSBC3E36 | Spectral Response 350-1100nm; photosensitive size Φ3.6mm, rise time 14ns, bandwidth 25 MHz | Response wavelength: 350–1100nm Active area: 3.6mm Bandwidth: 25MHz |
| 200-1100nm silicon-based biased photodetector |
PDSBC2B10 | Spectral Response 200-1100nm; photosensitive size Φ1.0mm, rise time 1ns, bandwidth 350 MHz | Response wavelength: 200–1100nm Active area: 1mm Bandwidth: 350MHz |
Parameter
Features
● The photosensitive range covers 200nm~1100nm, and is often used for ultraviolet and visible light measurement.
● Biased detector, extremely low noise, fast response, no gain
● Low cost, suitable for conventional photoelectric detection applications
● Excellent performance, high cost performance, all-round technical support
● Provide non-standard customized services
Specifications
Performance Specifications
Parameters | Value |
Wavelength range | 200-1100nm | 350-1100nm | 320-1100nm |
Photosensitive size | Φ1.0mm | Φ3.6mm | Φ10.0mm |
Bandwidth range | 350MHz | 25MHz | 10MHz |
Rise time (@50Ω) | 1ns | 14ns | 35ns |
NEP | 5.0 × 10-14W/Hz1/2 | 1.6 × 10-14W/Hz1/2 | 2.4 × 10-14W/Hz1/2 |
Dark current | 0.3nA(Typ.)/10 nA(Max) | 0.35nA(Typ.)/6.0nA(Max) | 0.9nA(Typ.)/10nA(Max) |
Junction capacitance | 6pF(Typ.) | 40pF(Typ.) | 150pF(Typ.) |
Bias voltage | 10V |
Output current | 0~10mA |
Output voltage | ~9V(Hi-Z)； ~170mV(50Ω) |
Photosensitive surface depth | 0.09" (2.2mm) | 0.09" (2.2mm) | 0.13" (3.3mm) |
Operating temperature | 10-40℃ |
Storage temperature | -20-70℃ |
Detector net weight | 0.10kg |
Undervoltage index | Vout ≤9V(Hi-Z) Vout ≤170mV(50Ω) |
Appearance size | 2.79" X1.96" X0.89" (70.9mm X 49.8mm X22.5mm) |
Power supply battery | Power switch | Signal interface | Battery monitoring | Strut interface | Optical interface |
A23 ，12VDC ，40mAh | Slide switch | BNC female connector | Momentary Push Buttons | M4 X 2 | SM1 X 1 SM0.5 X 1 |
SI Response Curve
Attachment 1: Optional configuration table
Silicon based biasing photodetector | Optional Configuration |
Product Name | Material | Type | Feature | Wavelength range Active Area | Reserve Optional configuration |
PD: "Photodetector" | S:Si Silicon-based | B: Bias type | C: Conventional type | 2B10: 200-1100nm, Φ1.0mm |
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| 3E36: 350-1100nm, Φ3.6mm |
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| 3D100: 320-1100nm, Φ10.0mm |
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Dimension
Application
● UV and Visible Light Measurements
Product model
PDSBC3D100Response wavelength: 320–1100nm
Active area: 10mm
Bandwidth: 10MHz
PDSBC3E36Response wavelength: 350–1100nm
Active area: 3.6mm
Bandwidth: 25MHz
PDSBC2B10Response wavelength: 200–1100nm
Active area: 1mm
Bandwidth: 350MHz
Parameter
● The photosensitive range covers 200nm~1100nm, and is often used for ultraviolet and visible light measurement.
● Biased detector, extremely low noise, fast response, no gain
● Low cost, suitable for conventional photoelectric detection applications
● Excellent performance, high cost performance, all-round technical support
● Provide non-standard customized services
Performance Specifications
Parameters
Value
Wavelength range
200-1100nm
350-1100nm
320-1100nm
Photosensitive size
Φ1.0mm
Φ3.6mm
Φ10.0mm
Bandwidth range
350MHz
25MHz
10MHz
Rise time (@50Ω)
1ns
14ns
35ns
NEP
5.0 × 10-14W/Hz1/2
1.6 × 10-14W/Hz1/2
2.4 × 10-14W/Hz1/2
Dark current
0.3nA(Typ.)/10 nA(Max)
0.35nA(Typ.)/6.0nA(Max)
0.9nA(Typ.)/10nA(Max)
Junction capacitance
6pF(Typ.)
40pF(Typ.)
150pF(Typ.)
Bias voltage
10V
Output current
0~10mA
Output voltage
~9V(Hi-Z)；
~170mV(50Ω)
Photosensitive surface depth
0.09" (2.2mm)
0.09" (2.2mm)
0.13" (3.3mm)
Operating temperature
10-40℃
Storage temperature
-20-70℃
Detector net weight
0.10kg
Undervoltage index
Vout ≤9V(Hi-Z) Vout ≤170mV(50Ω)
Appearance size
2.79" X1.96" X0.89" (70.9mm X 49.8mm X22.5mm)
Power supply battery
Power switch
Signal interface
Battery monitoring
Strut interface
Optical interface
A23 ，12VDC ，40mAh
Slide switch
BNC female connector
Momentary Push Buttons
M4 X 2
SM1 X 1
SM0.5 X 1
SI Response Curve
Attachment 1: Optional configuration table
Silicon based biasing photodetector
Optional Configuration
Product Name
Material
Type
Feature
Wavelength range Active Area
Reserve Optional configuration
PD: "Photodetector"
S:Si Silicon-based
B: Bias type
C: Conventional type
2B10: 200-1100nm, Φ1.0mm
3E36: 350-1100nm, Φ3.6mm
3D100: 320-1100nm, Φ10.0mm
● UV and Visible Light Measurements