알림

Si photodetector consists of two matched ultra-low noise analog photodiodes, a low noise broadband transimpedance amplifier and Ultra Low Noise power supply. Due to high gain, high sensitivity, high bandwidth, low noise, and high common mode rejection ratio, the high speed and low noise balance photo detector can effectively reduce the commonmode noise, and improve the signal-to-noise ratio of the system.

Product model

2GHz Si Photodetector [PDF] [RFQ]

PD-2G-B

Response wavelngth 400-1100nm, Bandwidth 2G, Material Si, Detector response 0.55A/W@850nm, Optical Input Free Space

Response wavelength: 400-1100nm

Bandwidth: 2GHz

Lead Time: 2-3 weeks

1GHz Si Photodetector [PDF] [RFQ]

PD-1G-B

Response wavelngth 400-1100nm, Bandwidth 1G, Material Si, Detector response 0.55A/W@850nm, Optical Input Free Space

Response wavelength: 400-1100nm

Bandwidth: 1GHz

Lead Time: 2-3 weeks

400MHz Si Photodetector [PDF] [RFQ]

PD-400M-B

Response wavelngth 400-1100nm, Bandwidth 400M, Material Si, Detector response 0.55A/W@850nm, Optical Input Free Space

Response wavelength: 400-1100nm

Bandwidth: 400MHz

Lead Time: 2-3 weeks

300MHz Si Photodetector [PDF] [RFQ]

PD-300M-B

Response wavelngth 400-1100nm, Bandwidth 300M, Material Si, Detector response 0.55A/W@850nm, Optical Input Free Space

Response wavelength: 400-1100nm

Bandwidth: 300MHz

Lead Time: 2-3 weeks

200MHz Si Photodetector [PDF] [RFQ]

PD-200M-B

Response wavelngth 400-1100nm, Bandwidth 200M, Material Si, Detector response 0.55A/W@850nm, Optical Input Free Space

Response wavelength: 400-1100nm

Bandwidth: 200MHz

Lead Time: 2-3 weeks

100MHz Si Photodetector [PDF] [RFQ]

PD-100M-B

Response wavelngth 400-1100nm, Bandwidth 100M, Material Si, Detector response 0.55A/W@850nm, Optical Input Free Space

Response wavelength: 400-1100nm

Bandwidth: 100MHz

Lead Time: 2-3 weeks

Parameter

Features

● Low Noise

● High Bandwidth

● High Transimpedance Gain

● Compact Structure

● Low noise isolation power supply

Specifications

Product Model	PD-100M-B	PD-200M-B	PD-300M-B	PD-400M-B	PD-1G-B	PD-2G-B	Unit
Detector	Si
Wavelength	400~1100						nm
Detector Responsivity	0.55@850nm						A/W
Bandwidth	100M	200M	300M	400M	1G	2G	Hz
Transimpedance Gain	30K	30K	30K	10K	30K	15K	V/A
Saturated Input Optical Power	240	240	240	725	240	480	μW
NEP	11	11	11	14	20	20	pW/Sqrt(Hz)
Output Impedance	50	50	50	50	50	50	Ω
Output Coupling Mode	DC/AC	DC/AC	DC/AC	DC/AC	AC	AC
Supply Voltage	5	5	5	5	12	12	V
Supply Current	0.3(max)	0.3(max)	0.3(max)	0.3(max)	0.3(max)	0.3(max)	A
Optical Input	FC/APC（or Free Space）
Radio Frequency Output	SMA
Shape Size	655020						mm

Application

● Optical Fiber Sensing

● Optical Fiber Communication

● Laser Ranging

● Spectrometry

400~900nm Silicon-Based Ultrafast Photodetector (Up to 20GHZ) Si Amplifier Photodetector 400nm-1100nm (5MHz)

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