Si PD Module

Ultra-high-speed detectors(Up to 20GHZ), commonly used for visible light and near-mid-infrared light measurement; Suitable for intensity-time waveform measurement of high-speed laser pulses or luminescence events. Excellent performance, high cost-effectiveness, and full technical support, Provide non-standard customization services.

Product model

400~900nm Silicon-Based Ultrafast Photodetector

Si-0.4/0.9um-2.5G/130ps-S

Spectral Response 400~900nm; active area Φ70um, rise time 130ps, bandwidth 2.5GHz

Response wavelength: 400-900nm

Active area: 70um

Bandwidth: 2.5GHz

400~900nm Silicon-Based Ultrafast Photodetector

Si-0.4/0.9um-10G/40ps-S

Spectral Response 400~900nm; active area Φ50um, rise time 40ps, bandwidth 10GHz

Response wavelength: 400-900nm

Active area: 50um

Bandwidth: 10GHz

Parameter

Features

● Biased detectors

● extremely low noise

● ultra-high-speed response

● no gain

Key Parameter

Product parameters

Parameter	Details
bias voltage	A23 dry battery, 12V
Working impedance	50Ω
Photosensitive surface characteristics	Planar lens/coupling lens/fiber holder FC interface/single mode pigtail FC connector
Operating temperature/storage temperature	0~40℃
Detector net weight	0.13kg
Appearance size	Φ 36mm X 53.5mm
battery powered	A23, 12VDC, 40mAh
Signal interface	SMA (DC coupling)
Strut interface	M4 X 1

Response Curve

DFB1550，Power 4mW Signal testing

Product Configuration

Part Number

Part Number	Range	Active Area	Rise Time(RT)	Bandwidth (BW)
Si-0.4/0.9um-10G/40ps-S	400~900nm	Φ50um	40ps	10GHz
Si-0.4/0.9um-2.5G/130ps-S	400~900nm	Φ70um	130ps	2.5GHz

Note: -S flat window; -L coupling lens; -FC fiber holder FC interface; -SMFC single mode pigtail FC connector.

Dimension

PhotoDetector: 200~1100nm, Si, Amplifier, Fixed Gain Si Photodetector

목록 글쓰기

400~900nm Silicon-Based Ultrafast Photodetector (Up to 20GHZ)

Product model

Parameter