The device is a compound Si-PIN structure. To reach high response, back side hole etching process is used for thinner I layer, when carrier go through the floating area, optical current will appear .Slow optical carrieIP are shorted for fast response purpose.We has our Patented package Desgin-“Bullet” design adopts Two optimized chips special for different wavelength.
One we called Circle Chip and the other is square Chip.
Circle chip has the peak response wavelength near 950nm.It has good response to the wavelength near 1060nm.
Square Chip has the peak response wavelength near 900nm.It has good response to the wavelength @450nm~650nm Devices can be pigtailed with any size optical fiber that is compatible with its active area size. Pigtails range in core size from 3um to 100 micron. One meter is the standard length, but any length or connector termination may be specified. Pigtails may be terminated with ST, FC, SC and LC connectors with either PC or APC polish.
Product model
| Si Pigtailed Photodiodes |
PL-1100-SI-AR1-FSA-TO | Response Spectrum 400~1100nm, Square Active diameter 1x1mm, Reponsivity 0.38 A/W@635nm | Response wavelength: 400-1100nm Material: Si Active area: 1x1mm |
| Si Pigtailed Photodiodes |
PL-1100-SI-AR1-FSA-TO | Response Spectrum 400~1100nm, Circle Active diameter 1mm, Reponsivity 0.23 A/W@1060nm | Response wavelength: 400-1100nm Material: Si Active area: 1mm |
Parameter
Features
● Large Sensitive Area
● Low Dark Current
● High Responsivity
● High Reliability
E/O Characteristics
Tsub=25°C, CW bias unless stated otherwise
Circle chip
Parameters | Sym. | Test conditions | Min | Typ | Max | Unit |
Response Spectrum | λ | - | 400~1100 | nm |
Circle Active diameter | φ | - | 0.2 | 0.5 | 1.0 | 2.0 | 4.0 | mm |
Reponsivity | Re | λ=1060nm,VR=40V | 0.2 | 0.2 | 0.2 | 0.23 | 0.23 | A/W |
Response time | Tr | RL=50Ω,VR=40V, | 2.0 | 5.0 | 6.0 | 8.0 | 12.0 | ns |
Reverse breakdown voltage | VBR | I R =10µA | 80 | 100 | 80 | 100 | 100 | V |
Dark current | ID | V R =40V | 1 | 5 | 8 | 10 | 40 | nA |
Capacitance | C | F=1MHZ,V R =40V | 0.5 | 0.8 | 2.0 | 5.0 | 12 | PF |
Operating Voltage | VR | - | 40 | V |
Note: Saturated optic power ≤0.3w/cm2
Square chip
Parameters | Sym. | Test conditions | Min | Typ | Max | Unit |
Response Spectrum | λ | - | 400~1100 | nm |
Circle Active diameter | φ | - | 1x1 | 4x4 | 1.3x1.3 | 2x2 | 3x3 | mm |
Reponsivity | Re | λ=635nm,VR=10V | 0.38 | A/W |
Response time | Tr | RL=50Ω,VR=10V, | 25 | 100 | 45 | 50 | 50 | ns |
Reverse breakdown voltage | VBR | I R =10µA | 50 | V |
Dark current | ID | V R =10V | 3 | 15 | 3 | 5 | 7 | nA |
Capacitance | C | F=1MHZ,V R =10V | 15 | 350 | 50 | 300 | 500 | PF |
Operating Voltage | VR | - | 10 | V |
Note: Saturated optic power ≤0.3w/cm2
Typical characteristical curve
Responsivity, R (A/W)
Circle chip Wavelength, λ (nm)
Responsivity, R (A/W)
Square chip Wavelength, λ (nm)
Capacitance vs voltage Curve
capacitance
Voltage（V）
Application electric circuit
Dimensions and Pin definitions
SMF-28E Fiber Nominal Characteristics and Tolerances
Parameters | Specification |
Cut off wavelength | 920nm |
Max Attenuation | 2.1dB/km |
Cladding Diameter | 125um |
Coating Diameter | 250um |
Core Cladding Concentricity | ≤0.5um |
Mode Field diameter | 9.5um |
Absolute maximum ratings
Item | Symbol | Unit | Min | Typ | Max | Testing Condition |
Case Temperature | TOP | ℃ | -5 | 25 | 70 |
|
Forward Voltage | VR | V | 5 | 10 | 15 |
|
Axial Pull Force |
| N | - | - | 5N | 3x10s |
Side Pull Force |
| N | - | - | 2.5N | 3x10s |
Fiber Bend Radius |
|
| 16mm |
|
| - |
Reverse Voltage(PD) | VPD | V | - | - | 10 | C=100pF,R=1.5KΩ，HBM |
PD electrostatic Discharge | VESD-PD | V |
| - | 500 |
|
PD Forward Current | IPF | mA |
| - | 10 |
|
Lead Soldering time |
| S |
| - | 10s | 260℃ |
Store Temperature | TSTG | ℃ | -40 | - | +85 | 2000hr |
Operating Temperature | TOP | ℃ | -55 | - | +125 |
|
Relative Humidity | RH |
| 5% | - | 95% | Noncondensing |
Application
● Distance measurement
● 0.4-1.1μm Transient Process
● Fast Physical and Chemical Process Optical detection
● Light Detection, YAG Pulse Power measurement,
● Fiber Optical Communication Detection
Ordering Info
PL-□□□□-☆-AR▽-XX-TO
□□□□：Cut off Wavelength
0400:400nm
0900:900nm
1700:1700nm
2100:2100nm
2400:2400nm
2700:2700nm
☆ ：Material
IG：InGaAs
Si：Si
▽：Active Area
1：1mm
2：2mm
1X1: 1x1mm
2X2: 2X2mm
XX: Package/Fiber and Connector Type
TO:TO46 Package
FSA=SMF-28E Fiber coupled+ FC/APC
FSP=SMF-28E Fiber coupled + FC/PC
FPP=PM Fiber Fiber coupled + FC/PC
FPA=PM Fiber Fiber coupled + FC/APC
User Safety
Safety and Operating Considerations
This device operates under reverse bias voltage, and the polarity of the device can’t be reversed.
Operating the Photodiode outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with this component cannot exceed maximum peak optical power.
ESD PROTECTION—Electrostatic discharge (ESD) is the primary cause of unexpected laser diode failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces, and rigorous antistatic techniques when handling Photodiodes.
The device is a compound Si-PIN structure. To reach high response, back side hole etching process is used for thinner I layer, when carrier go through the floating area, optical current will appear .Slow optical carrieIP are shorted for fast response purpose.We has our Patented package Desgin-“Bullet” design adopts Two optimized chips special for different wavelength.
One we called Circle Chip and the other is square Chip.
Circle chip has the peak response wavelength near 950nm.It has good response to the wavelength near 1060nm.
Square Chip has the peak response wavelength near 900nm.It has good response to the wavelength @450nm~650nm Devices can be pigtailed with any size optical fiber that is compatible with its active area size. Pigtails range in core size from 3um to 100 micron. One meter is the standard length, but any length or connector termination may be specified. Pigtails may be terminated with ST, FC, SC and LC connectors with either PC or APC polish.
Product model
PL-1100-SI-AR1-FSA-TOResponse wavelength: 400-1100nm
Material: Si
Active area: 1x1mm
PL-1100-SI-AR1-FSA-TOResponse wavelength: 400-1100nm
Material: Si
Active area: 1mm
Parameter
● Large Sensitive Area
● Low Dark Current
● High Responsivity
● High Reliability
Tsub=25°C, CW bias unless stated otherwise
Circle chip
Parameters
Sym.
Test conditions
Min
Typ
Max
Unit
Response Spectrum
λ
-
400~1100
nm
Circle Active diameter
φ
-
0.2
0.5
1.0
2.0
4.0
mm
Reponsivity
Re
λ=1060nm,VR=40V
0.2
0.2
0.2
0.23
0.23
A/W
Response time
Tr
RL=50Ω,VR=40V,
2.0
5.0
6.0
8.0
12.0
ns
Reverse breakdown voltage
VBR
I R =10µA
80
100
80
100
100
V
Dark current
ID
V R =40V
1
5
8
10
40
nA
Capacitance
C
F=1MHZ,V R =40V
0.5
0.8
2.0
5.0
12
PF
Operating Voltage
VR
-
40
V
Note: Saturated optic power ≤0.3w/cm2
Square chip
Parameters
Sym.
Test conditions
Min
Typ
Max
Unit
Response Spectrum
λ
-
400~1100
nm
Circle Active diameter
φ
-
1x1
4x4
1.3x1.3
2x2
3x3
mm
Reponsivity
Re
λ=635nm,VR=10V
0.38
A/W
Response time
Tr
RL=50Ω,VR=10V,
25
100
45
50
50
ns
Reverse breakdown voltage
VBR
I R =10µA
50
V
Dark current
ID
V R =10V
3
15
3
5
7
nA
Capacitance
C
F=1MHZ,V R =10V
15
350
50
300
500
PF
Operating Voltage
VR
-
10
V
Note: Saturated optic power ≤0.3w/cm2
Typical characteristical curve
Responsivity, R (A/W)
Circle chip Wavelength, λ (nm)
Responsivity, R (A/W)
Square chip Wavelength, λ (nm)
Capacitance vs voltage Curve
capacitance
Voltage（V）
Application electric circuit
SMF-28E Fiber Nominal Characteristics and Tolerances
Parameters
Specification
Cut off wavelength
920nm
Max Attenuation
2.1dB/km
Cladding Diameter
125um
Coating Diameter
250um
Core Cladding Concentricity
≤0.5um
Mode Field diameter
9.5um
Absolute maximum ratings
Item
Symbol
Unit
Min
Typ
Max
Testing Condition
Case Temperature
TOP
℃
-5
25
70
Forward Voltage
VR
V
5
10
15
Axial Pull Force
N
-
-
5N
3x10s
Side Pull Force
N
-
-
2.5N
3x10s
Fiber Bend Radius
16mm
-
Reverse Voltage(PD)
VPD
V
-
-
10
C=100pF,R=1.5KΩ，HBM
PD electrostatic Discharge
VESD-PD
V
-
500
PD Forward Current
IPF
mA
-
10
Lead Soldering time
S
-
10s
260℃
Store Temperature
TSTG
℃
-40
-
+85
2000hr
Operating Temperature
TOP
℃
-55
-
+125
Relative Humidity
RH
5%
-
95%
Noncondensing
● Distance measurement
● 0.4-1.1μm Transient Process
● Fast Physical and Chemical Process Optical detection
● Light Detection, YAG Pulse Power measurement,
● Fiber Optical Communication Detection
PL-□□□□-☆-AR▽-XX-TO
□□□□：Cut off Wavelength
0400:400nm
0900:900nm
1700:1700nm
2100:2100nm
2400:2400nm
2700:2700nm
☆ ：Material
IG：InGaAs
Si：Si
▽：Active Area
1：1mm
2：2mm
1X1: 1x1mm
2X2: 2X2mm
XX: Package/Fiber and Connector Type
TO:TO46 Package
FSA=SMF-28E Fiber coupled+ FC/APC
FSP=SMF-28E Fiber coupled + FC/PC
FPP=PM Fiber Fiber coupled + FC/PC
FPA=PM Fiber Fiber coupled + FC/APC
User Safety
Safety and Operating Considerations
This device operates under reverse bias voltage, and the polarity of the device can’t be reversed.
Operating the Photodiode outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with this component cannot exceed maximum peak optical power.
ESD PROTECTION—Electrostatic discharge (ESD) is the primary cause of unexpected laser diode failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces, and rigorous antistatic techniques when handling Photodiodes.