Si avalanche Photodetector module integrates low-noise APD detector, low-noise broadband transimpedance amplifier, ultra-low noise isolation power supply, high-voltage power supply; isolation power supply ensures that the output signal is not affected by external power supply; APD temperature compensation improves the stability of detection module. Avalanche photodetectors are characterized by high gain, high sensitivity, high bandwidth and low noise.
Product model
| Ф1.8mm 905nm Silicon avalanche photodiode |
MP-Si-1.8-TO5 | Active area 1.8mm ; Response Spectrum 400-1100nm, Material Si, Response time 1.0 ns, TO5 packag | Response wavelength: 400-1100nm Material: Si Active area: 1.8mm |
Parameter
Features
● Top illumination planar APD
● High operation frequency, High multiplication gain
● Laser range finder,Laser alarming, RADAR, etc. application.
E/O Characteristics
The opto-eletronic characteritics (@Tc=22±3℃)
Parameters | Sym. | Test conditions | Min | Typ | Max | Unit |
Response Spectrum | λ | — | 400～1100 | nm |
Active diameter | φ | — | 1800 | μm |
Reponsivity | Re | λ=905nm,φe=1μw, M=100 | 50 | 55 |
| A/W |
Response time | Ts | f=1MHz,RL=50Ω,λ=905nm |
| 1.0 |
| ns |
Dark current | ID | M=100 |
| 3.0 | 8.0 | nA |
Total capacitance | Ctot | M=100,f=1MHz |
| 8.0 |
| pF |
Reverse breakdown voltage | VBR | IR=10uA | 120 |
| 220 | V |
Operating voltage temperature coefficient | δ | Tc=-40℃～85℃ |
| 1.1 |
| V/℃ |
The absolute values
Operating voltage | 0.95×VBR | Operating temperature | -50～85℃ | Power dissipation | 1mW |
Forward current | 1mA | storage temperature | -55～100℃ | Soldering temperature(time) | 260℃(10s) |
The typical characteristical curve
Figure1. Responsivity vs. Wavelength at 0v
Figure2. Gain vs. UR/UBR
Figure3. Dark Current vs. UR/UBR
Figure4. Capacitance vs. Operating voltage
The application electric circuit
Figure5. Equivalent Circuit Diagram
Figure6. optical Drawing
Note ：
C1 - filter capacitor, mainly to filter out the noise of the bias working voltage VR;
C2 - bypass capacitor, mainly to provide a ground loop for the AC signal;
R1 - current limiting resistor, mainly to protect the detector from being damaged when the bias working voltage VR is too high;
Ri-sampling resistor, which converts the photocurrent into a voltage signal.
Dimensions and Pin definitions
The cautions
1.The suitable ESD protecting measures are recommend in storage,transporting and using.
Application
● Optical Fiber Sensing
● Optical Fiber Communication
● Laser Ranging
● Spectrometry
Si avalanche Photodetector module integrates low-noise APD detector, low-noise broadband transimpedance amplifier, ultra-low noise isolation power supply, high-voltage power supply; isolation power supply ensures that the output signal is not affected by external power supply; APD temperature compensation improves the stability of detection module. Avalanche photodetectors are characterized by high gain, high sensitivity, high bandwidth and low noise.
Product model
MP-Si-1.8-TO5Response wavelength: 400-1100nm
Material: Si
Active area: 1.8mm
Parameter
● Top illumination planar APD
● High operation frequency, High multiplication gain
● Laser range finder,Laser alarming, RADAR, etc. application.
The opto-eletronic characteritics (@Tc=22±3℃)
Parameters
Sym.
Test conditions
Min
Typ
Max
Unit
Response Spectrum
λ
—
400～1100
nm
Active diameter
φ
—
1800
μm
Reponsivity
Re
λ=905nm,φe=1μw, M=100
50
55
A/W
Response time
Ts
f=1MHz,RL=50Ω,λ=905nm
1.0
ns
Dark current
ID
M=100
3.0
8.0
nA
Total capacitance
Ctot
M=100,f=1MHz
8.0
pF
Reverse breakdown voltage
VBR
IR=10uA
120
220
V
Operating voltage temperature coefficient
δ
Tc=-40℃～85℃
1.1
V/℃
The absolute values
Operating voltage
0.95×VBR
Operating temperature
-50～85℃
Power dissipation
1mW
Forward current
1mA
storage temperature
-55～100℃
Soldering temperature(time)
260℃(10s)
The typical characteristical curve
Figure1. Responsivity vs. Wavelength at 0v
Figure2. Gain vs. UR/UBR
Figure3. Dark Current vs. UR/UBR
Figure4. Capacitance vs. Operating voltage
The application electric circuit
Figure5. Equivalent Circuit Diagram
Figure6. optical Drawing
Note ：
C1 - filter capacitor, mainly to filter out the noise of the bias working voltage VR;
C2 - bypass capacitor, mainly to provide a ground loop for the AC signal;
R1 - current limiting resistor, mainly to protect the detector from being damaged when the bias working voltage VR is too high;
Ri-sampling resistor, which converts the photocurrent into a voltage signal.
The cautions
1.The suitable ESD protecting measures are recommend in storage,transporting and using.
● Optical Fiber Sensing
● Optical Fiber Communication
● Laser Ranging
● Spectrometry