The PL-400-SIA-AR0800-TO8-TIA is a Silicon Avalanche Photodiode (Si APD) Amplifier Module with 50 MHz bandwidth and includes our C30817 silicon avalanche photodiode (APD). With a useful diameter of 0.8 mm, the C30950EH provides good response between 400 and 1100 nm and is supplied in a modified 12-lead TO-8 package.
Product model
| φ3mm 50MHz Si APD Photodiodes |
PL-400-SIA-AR3000-TO8-TIA-50 | Response Spectrum 400~1100nm, TO8 Package, 50MHz, with preamplifier module, Temperature sensor | Response wavelength: 400-1100nm Material: Si Active area: 3mm Package: TO-8 |
| φ0.8mm 130MHz Si APD Photodiodes |
PL-400-SIA-AR0800-TO8-TIA-130 | Response Spectrum 400~1100nm, TO8 Package, 130MHz, with preamplifier module, Temperature sensor | Response wavelength: 400-1100nm Material: Si Active area: 0.8mm Package: TO-8 |
| φ0.8mm 50MHz Si APD Photodiodes |
PL-400-SIA-AR0800-TO8-TIA-50 | Response Spectrum 400~1100nm, TO8 Package, 50MHz, with preamplifier module, Temperature sensor | Response wavelength: 400-1100nm Material: Si Active area: 0.8mm Package: TO-8 |
Parameter
Features
● Si APD receiver module with 50 MHz bandwidth
● Spectral response: 400 to 1100 nm
● Hermetally-sealed TO-8 package
● High reliability
● Fast overload recovery
● Light entry angle 130°
● Pin compatible with the Excelitas C30659 Series
E/O Characteristics
The Opto-electronic Characteristics(Tc=22± 3℃,VCC/VEE=±5V,AC Rl=50Ω)
Parameters | Sym. | Test conditions | Min | Typ | Max | Unit |
Response Spectrum | λ | — | 400～1100 | nm |
Active Diameter | D | — | 0.8 | mm |
Reverse breakdown voltage | VBR | dark current ID=10μA,Optical output power φe=0 | 200 |
| 450 | V |
Operating voltage | VR | 0.90×VBR | 320 | V |
Responsivity | RV | M=100,λ=1.06μm,pulse width TW=100ns |
| 150 |
| kV/W |
Dynamic range | DY | M=100,λ=1.06μm | 25 |
|
| dB |
-3dB bandwidth | BW | M=100,λ=1.06μm, pulse width TW=100ns |
| 35 |
| MHz |
Rise/Fall time | Tr | M=100,λ=1.06μm, pulse width TW=100ns |
| 10 |
| ns |
Noise Equivalent Power | NEP | M=100,f=100kHz,△f=1.0Hz |
|
| 0.20 | pW/ √Hz |
Output impedance | RO |
|
| 33 |
| Ω |
Output Voltage Swing | VO | - |
| 0.7 |
| V |
Offset Voltage | Voffset | - |
| -0.7 |
| V |
Positive Supply Current | ICC |
|
|
| 10 | mA |
Negative Supply Current | IEE |
|
| 10 | mA |
Temperature coefficient | σ | -45℃~+70℃ |
| 2.4 |
| V/℃ |
Concentricity | △D | - |
|
| 50 | μm |
Typical Performance Curves（Tc=23±2℃,VCC/VEE=±5V,AC Rl=50Ω)
Figure1 Responsivity vs. Wavelength
Figure2 Photo Current vs. Reverse Voltage(λ=1.06μm）
Figure3 Noise Equivalent Power vs. Bandwidth
Package Size
unit：mm
The package
Dimension symbols | ΦD1 | ΦD2 | H | Φe | ΦD3 | L | e1 | e2 | d1 | d2 | H1） |
Max | 13.94 | 11.10 | 5.65 | 0.55 | 15.50 | 15 | 10.20 | 2.60 | 0.85 | 1.05 | - |
Typ. | - | - | - | - | - | - | - | - | - | - | 1.45 |
Min | 13.90 | 10.90 | 5.25 | 0.45 | 15.20 | 10 | 10.00 | 2.40 | 0.75 | 0.95 | - |
Note: 1) Optical distance between light sensitive surface and light window surface.
Pin definition
Outlet arrangement
PIN# | Function | Symbol |
1 | Output | VOUT |
6/7/10 | Ground | GND |
2/5/7/11 | Suspend or ground | N.C or GND |
3 | Negative power supply | VEE |
4 | APD bias working voltage | VR |
8 | Suspend or ground | N.C or GND |
9 | Suspend or ground | N.C or GND |
12 | Positive power supply | VCC |
Maximum Ratings
Parameter | Symbol | Rating | Unit |
APD voltage supply | VR | VBR | V |
Operating temperature | TC | -45～+85 | ℃ |
Storage temperature | TSTG | -55～+100 | ℃ |
Maximum optical input power | Pin | 10 | mW |
Module mains voltage | Vcc/VEE | ±9 | V |
Power dissipation | Pw | 100 | mW |
Soldering temperature(time) | - | 300（10s） | ℃ |
The cautions
Pins are connected strictly according to pins illuminating,Load need large than 10kΩ when coupling output DC.
It should be kept in storage at an environment that has -55～+100℃ and less than 80％ relative humidity,dryness,airiness,no causticness gas.
The suitable ESD protecting mersures are recommend in storage,transporting and using
It's high voltage device,so we need proper design and measure to escape cause damage to human body when using and operating.
Application
● Range Finding
● Confocal Microscope
● LiDAR
● Laser designation
● Scanning laser ophthalmoscope
Product model
PL-400-SIA-AR3000-TO8-TIA-50Response wavelength: 400-1100nm
Material: Si
Active area: 3mm
Package: TO-8
PL-400-SIA-AR0800-TO8-TIA-130Response wavelength: 400-1100nm
Material: Si
Active area: 0.8mm
Package: TO-8
PL-400-SIA-AR0800-TO8-TIA-50Response wavelength: 400-1100nm
Material: Si
Active area: 0.8mm
Package: TO-8
Parameter
● Si APD receiver module with 50 MHz bandwidth
● Spectral response: 400 to 1100 nm
● Hermetally-sealed TO-8 package
● High reliability
● Fast overload recovery
● Light entry angle 130°
● Pin compatible with the Excelitas C30659 Series
The Opto-electronic Characteristics(Tc=22± 3℃,VCC/VEE=±5V,AC Rl=50Ω)
Parameters
Sym.
Test conditions
Min
Typ
Max
Unit
Response Spectrum
λ
—
400～1100
nm
Active Diameter
D
—
0.8
mm
Reverse breakdown voltage
VBR
dark current ID=10μA,Optical output power φe=0
200
450
V
Operating voltage
VR
0.90×VBR
320
V
Responsivity
RV
M=100,λ=1.06μm,pulse width TW=100ns
150
kV/W
Dynamic range
DY
M=100,λ=1.06μm
25
dB
-3dB bandwidth
BW
M=100,λ=1.06μm, pulse width TW=100ns
35
MHz
Rise/Fall time
Tr
M=100,λ=1.06μm, pulse width TW=100ns
10
ns
Noise Equivalent Power
NEP
M=100,f=100kHz,△f=1.0Hz
0.20
pW/ √Hz
Output impedance
RO
33
Ω
Output Voltage Swing
VO
-
0.7
V
Offset Voltage
Voffset
-
-0.7
V
Positive Supply Current
ICC
10
mA
Negative Supply Current
IEE
10
mA
Temperature coefficient
σ
-45℃~+70℃
2.4
V/℃
Concentricity
△D
-
50
μm
Typical Performance Curves（Tc=23±2℃,VCC/VEE=±5V,AC Rl=50Ω)
Figure1 Responsivity vs. Wavelength
Figure2 Photo Current vs. Reverse Voltage(λ=1.06μm）
Figure3 Noise Equivalent Power vs. Bandwidth
unit：mm
The package
Dimension symbols
ΦD1
ΦD2
H
Φe
ΦD3
L
e1
e2
d1
d2
H1）
Max
13.94
11.10
5.65
0.55
15.50
15
10.20
2.60
0.85
1.05
-
Typ.
-
-
-
-
-
-
-
-
-
-
1.45
Min
13.90
10.90
5.25
0.45
15.20
10
10.00
2.40
0.75
0.95
-
Note: 1) Optical distance between light sensitive surface and light window surface.
Outlet arrangement
PIN#
Function
Symbol
1
Output
VOUT
6/7/10
Ground
GND
2/5/7/11
Suspend or ground
N.C or GND
3
Negative power supply
VEE
4
APD bias working voltage
VR
8
Suspend or ground
N.C or GND
9
Suspend or ground
N.C or GND
12
Positive power supply
VCC
Maximum Ratings
Parameter
Symbol
Rating
Unit
APD voltage supply
VR
VBR
V
Operating temperature
TC
-45～+85
℃
Storage temperature
TSTG
-55～+100
℃
Maximum optical input power
Pin
10
mW
Module mains voltage
Vcc/VEE
±9
V
Power dissipation
Pw
100
mW
Soldering temperature(time)
-
300（10s）
℃
The cautions
Pins are connected strictly according to pins illuminating,Load need large than 10kΩ when coupling output DC.
It should be kept in storage at an environment that has -55～+100℃ and less than 80％ relative humidity,dryness,airiness,no causticness gas.
The suitable ESD protecting mersures are recommend in storage,transporting and using
It's high voltage device,so we need proper design and measure to escape cause damage to human body when using and operating.
● Range Finding
● Confocal Microscope
● LiDAR
● Laser designation
● Scanning laser ophthalmoscope