PL-1100-SI-QD16-TO SI Quadrant PIN Detector, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 400 nm to 1100 nm. The photosensitive area is 16mm x 4 in diameter. Planar-passivated device structure.
Product model
| 10mm SI Quadrant PIN Detector |
PL-1100-SI-QD10-TO | Response wavelength 400nm to 1100nm, Response 0.3A/W@1064nm, Active Area Diameter 10mm, Photosensitive material Si | Material: Si Active area: 10mm |
| 16mm SI Quadrant PIN Detector |
PL-1100-SI-QD16-TO | Response wavelngth 400nm to 1100nm, Response 0.3A/W@1064nm, Active Area Diameter 16mm, Photosensitive material Si | Material: Si Active area: 16mm |
Parameter
Features
● Top illumination planar PD
● Narrow Element gap,
● Low Crosstalk,High reliability
● Good Reponsivity homogeneity of each Quadrant
E/O Characteristics
Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)
Parameters | Symbol | Test Condition （TA=22℃±3℃） | Value | Unit |
Min | Max |
Response(AC)(Quadrant) | Spi | λ=1.064μm VR=135 V | Pulse Width 20 ns、Pin=2 mW | 0.25 | — | A/W |
Response(DC)(Quadrant) | Rei | DC、Pin=1μw | 0.30 | — |
Response variation (DC) (Quadrant)a Response variation (AC) (Quadrant)a | ΔRei | TA=-45 ℃±2 ℃ | — | 50 | % |
Dark Current(Quadrant) | IDi | VR=135V Pin=0μw | TA=22℃±3℃ | — | 1 | μA |
TA=70℃±3℃ | — | 10 |
Dark Current(RING) | ID | TA=22℃±3℃ | — | 10 |
TA=70℃±3℃ | — | 100 |
Junction capacitance（Quadrant） | Cji | VR=135V，f=1MHz | — | 15 | pF |
Active Area Diameter | φ |
| 10 | 16 | mm |
Equivalent noise power | NEPi | λ=1.064 μm，VR=135 V ,Pulse Width 20 ns | — | 5×10-12 | W/HZ1/2 |
Breakdown voltage（Quadrant、Ring） | VBR | IR=10μA | 200 | — | V |
Nonuniformity of sensitivity between pixels | Rf | λ=1.064 μm，VR=135 V ，Pulse Width 20 ns；Pin=2mW | — | 5 | % |
Nonuniformity of sensitivity in pixels | Rfn | λ=1.064 μm，VR=135 V ，Pulse Width20 ns；Pin=2mW | — | 5 | % |
Crosstalk Factor between pixels | SLi | λ=1.064 μm，VR=135 V ，Pulse Width 20 ns；Pin=2mW | — | 5 | % |
Typical characteristical curve
Dimensions and Pin definitions
Dimension Outline
TO Type Full sealed design. Outline reference Figture1,Dimension Reference table1
Table 1, Dimension (Unit in mm)
SYB | φD1 | ΦD2 | ΦD3 | ΦD4 | ΦD5 | Φd | A | L1 | L2 | L3 | e |
Min | 30.55 | 27.80 | 3.00 | 27.915 | 22.60 | 0.98 | 7.03 | 3.02 | 1.85 | 2.70 | 18.00 |
Max | 30.65 | 28.00 | 3.06 | 27.94 | 23.40 | 1.02 | 7.20 | 3.10 | 1.95 | 3.00 | 18.05 |
PIN Output Array
Pin output array reference Figure 2,PIN Function Reference Table 2.
Table2,PIN Output Array function
PIN# | Function | Voltage polarity |
1 | Quadrant1 | + |
2 | Common P polarity | - |
3 | Quadrant4 | + |
4 | Ring | + |
5 | Quadrant3 | + |
6 | Cell | GND |
7 | Quadrant2 | + |
Application
● Laser beam position sensor
● Autocollimators
● Optical tweezers
● Ellipsometers
Ordering Info
PL-W□□□□-☆-QD▽-XX
□□□□: Cut off Wavelength
400: 400nm
900: 900nm
1100: 1100nm
2100: 2100nm
2400: 2400nm
2700: 2700nm
☆ : Material
IG: InGaAs
Si: Si
▽: Active Area(Single element)
10: 10mm
16: 16mm
XX: Package/Fiber and Connector Type
TO: TO Can Package
FSA=SMF-28E Fiber coupled+ FC/APC
FSP=SMF-28E Fiber coupled + FC/PC
FPP=PM Fiber Fiber coupled + FC/PC
FPA=PM Fiber Fiber coupled + FC/APC
User Safety
Safety and Operating Considerations
This device operates under reverse bias voltage, and the polarity of the device can’t be reversed.
Operating the Photodiode outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with this component cannot exceed maximum peak optical power.
ESD PROTECTION—Electrostatic discharge (ESD) is the primary cause of unexpected laser diode failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces, and rigorous antistatic techniques when handling Photodiodes.
Product model
PL-1100-SI-QD10-TOMaterial: Si
Active area: 10mm
PL-1100-SI-QD16-TOMaterial: Si
Active area: 16mm
Parameter
● Top illumination planar PD
● Narrow Element gap,
● Low Crosstalk,High reliability
● Good Reponsivity homogeneity of each Quadrant
Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)
Parameters
Symbol
Test Condition
（TA=22℃±3℃）
Value
Unit
Min
Max
Response(AC)(Quadrant)
Spi
λ=1.064μm
VR=135 V
Pulse Width 20 ns、Pin=2 mW
0.25
—
A/W
Response(DC)(Quadrant)
Rei
DC、Pin=1μw
0.30
—
Response variation (DC) (Quadrant)a
Response variation (AC) (Quadrant)a
ΔRei
TA=-45 ℃±2 ℃
—
50
%
Dark Current(Quadrant)
IDi
VR=135V
Pin=0μw
TA=22℃±3℃
—
1
μA
TA=70℃±3℃
—
10
Dark Current(RING)
ID
TA=22℃±3℃
—
10
TA=70℃±3℃
—
100
Junction capacitance（Quadrant）
Cji
VR=135V，f=1MHz
—
15
pF
Active Area Diameter
φ
10
16
mm
Equivalent noise power
NEPi
λ=1.064 μm，VR=135 V ,Pulse Width 20 ns
—
5×10-12
W/HZ1/2
Breakdown voltage（Quadrant、Ring）
VBR
IR=10μA
200
—
V
Nonuniformity of sensitivity between pixels
Rf
λ=1.064 μm，VR=135 V ，Pulse Width 20 ns；Pin=2mW
—
5
%
Nonuniformity of sensitivity in pixels
Rfn
λ=1.064 μm，VR=135 V ，Pulse Width20 ns；Pin=2mW
—
5
%
Crosstalk Factor between pixels
SLi
λ=1.064 μm，VR=135 V ，Pulse Width 20 ns；Pin=2mW
—
5
%
Typical characteristical curve
Dimension Outline
TO Type Full sealed design. Outline reference Figture1,Dimension Reference table1
Table 1, Dimension (Unit in mm)
SYB
φD1
ΦD2
ΦD3
ΦD4
ΦD5
Φd
A
L1
L2
L3
e
Min
30.55
27.80
3.00
27.915
22.60
0.98
7.03
3.02
1.85
2.70
18.00
Max
30.65
28.00
3.06
27.94
23.40
1.02
7.20
3.10
1.95
3.00
18.05
PIN Output Array
Pin output array reference Figure 2,PIN Function Reference Table 2.
Table2,PIN Output Array function
PIN#
Function
Voltage polarity
1
Quadrant1
+
2
Common P polarity
-
3
Quadrant4
+
4
Ring
+
5
Quadrant3
+
6
Cell
GND
7
Quadrant2
+
● Laser beam position sensor
● Autocollimators
● Optical tweezers
● Ellipsometers
PL-W□□□□-☆-QD▽-XX
□□□□: Cut off Wavelength
400: 400nm
900: 900nm
1100: 1100nm
2100: 2100nm
2400: 2400nm
2700: 2700nm
☆ : Material
IG: InGaAs
Si: Si
▽: Active Area(Single element)
10: 10mm
16: 16mm
XX: Package/Fiber and Connector Type
TO: TO Can Package
FSA=SMF-28E Fiber coupled+ FC/APC
FSP=SMF-28E Fiber coupled + FC/PC
FPP=PM Fiber Fiber coupled + FC/PC
FPA=PM Fiber Fiber coupled + FC/APC
User Safety
Safety and Operating Considerations
This device operates under reverse bias voltage, and the polarity of the device can’t be reversed.
Operating the Photodiode outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with this component cannot exceed maximum peak optical power.
ESD PROTECTION—Electrostatic discharge (ESD) is the primary cause of unexpected laser diode failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces, and rigorous antistatic techniques when handling Photodiodes.